Gate Trench Current Spread Region Alignment With Lower Implant Energy

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Existing semiconductor manufacturing processes face challenges in aligning the current spread region with the gate structure, requiring high implantation energy levels and potentially causing damage to the semiconductor surface, while also limiting the availability of suitable dopant implanting tools.

Innovation Solution

A method is introduced where the current spread region is formed after trench formation, with dopants implanted through the top surface and bottom of the trench to align with the gate structure, reducing the required implantation energy and enabling the use of a wider range of dopant implanting tools, thus improving tool redundancy and reducing power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If high implantation energy levels are used to align the current spread region with the gate structure, then alignment precision is improved, but damage to the semiconductor surface occurs and power consumption increases

Engineering Contradiction:

Improvealignment precisionVSAvoidsurface damage

Core Design Contradiction:

Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The current spread region is divided into two separate portions: a first portion formed by implanting dopants through the top surface and a second portion formed by implanting dopants through the bottom of the trench. This segmentation allows each portion to be formed with lower implantation energy, avoiding surface damage while achieving precise alignment with the gate structure.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The trench is formed before the dopant implantation process. This preliminary action creates a defined structure that guides the implantation process, allowing dopants to be implanted through the trench bottom with lower energy while ensuring precise alignment with the gate structure that will be formed in the trench.

Inventive Principle:

Principle #10Preliminary action

2Manufacturing precision

If high implantation energy levels are used to align the current spread region with the gate structure, then alignment precision is improved, but the number of available dopant implanting tools is reduced

Engineering Contradiction:

Improvealignment precisionVSAvoidtool availability

Core Design Contradiction:

Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

By segmenting the current spread region formation into two separate implantation processes (through top surface and through trench bottom), the required implantation energy for each process is reduced. This enables the use of a wider range of dopant implanting tools that operate at lower energy levels, increasing tool availability and versatility.

Inventive Principle:

Principle #1Segmentation

3Manufacturing precision

If high implantation energy levels are used to form the current spread region, then alignment with the gate structure is achieved, but power consumption increases

Engineering Contradiction:

Improvealignment precisionVSAvoidpower consumption

Core Design Contradiction:

Manufacturing precisionVSUse of energy by moving object

Solution Approach 1:

The implantation process is segmented into two separate processes with lower energy requirements. The first process implants dopants through the top surface to form the first portion, and the second process implants dopants through the trench bottom to form the second portion. The sum of the energy consumed by these two low-energy processes is less than the energy required for a single high-energy implantation process, thereby reducing overall power consumption.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach ensures precise alignment of the current spread region with the gate structure, reduces implantation energy requirements, and increases tool redundancy, leading to improved electrical performance and reduced manufacturing costs.

Implementation Method 1

One or more first implantation processes may be performed to form an implanted region, of a first conductivity type, in a semiconductor body. After forming the trench, a second implantation process may be performed to form a current spread region, of a second conductivity type, in the semiconductor body.

Methodology Applied

Scientific EffectIon implantation: Ion Implantation

Data Source

PatentUS12520540B2Semiconductor device with gate structure and current spread region

Publication Date: 2026.01.06 INFINEON TECHNOLOGIES AG

AI summary

According to some embodiments, a method for manufacturing a semiconductor device is provided. One or more first implantation processes are performed to form an implanted region, of a first conductivity type, in a semiconductor body. A trench is formed in the semiconductor body. After forming the trench, a second implantation process is performed to form a current spread region, of a second conductivity type, in the semiconductor body. The second implantation process includes implanting first dopants, through a top surface of the semiconductor body, to form a first portion of the current spread region, and implanting second dopants, through a bottom of the trench, to form a second portion of the current spread region. A gate structure is formed in the trench. A vertical position of the first portion of the current spread region matches a vertical position of the gate structure. The second portion of the current spread region underlies the gate structure.