Gate Cut Trench Decoupling Capacitor for Power Rail Noise
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Solution Overview
Problem
Conventional power rails in semiconductor devices cause noise that reduces performance, and existing decoupling capacitors in interconnect layers have limited capacitance density and frequency response.
Innovation Solution
Form decoupling capacitors in gate cut trenches between n-type and p-type gates, extending into the semiconductor substrate, using dielectric and ferroelectric materials to enhance capacitance and reduce noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If decoupling capacitors are formed in interconnect layers, then power rail noise is reduced, but capacitance density is limited and frequency response is insufficient
Solution Approach 1:
The patent transitions from forming decoupling capacitors in the horizontal plane (interconnect layers) to forming them in the vertical dimension (gate cut trenches extending into the substrate). This dimensional change enables significantly higher capacitance density by utilizing the depth of the trench structure, while the proximity to power rails maintains effective noise reduction at relevant frequencies.
2Ease of operation
If conventional power rails are used in interconnect layers, then device connectivity is achieved, but area consumption is significant and noise is generated
Solution Approach 1:
The patent merges the function of decoupling capacitors with the gate cut trench structure that already exists for separating n-type and p-type gates. By forming the capacitor within the trench using the trench walls as capacitor plates, the design eliminates the need for separate capacitor structures and interconnect layer routing, thereby reducing area consumption while maintaining connectivity functions.
3Ease of manufacture
If decoupling capacitors are placed farther from power rails, then manufacturing is easier, but noise reduction effectiveness decreases
Solution Approach 1:
The gate cut trench structure inherently provides the decoupling capacitor function by using its own walls as capacitor plates. The trench is formed during the gate separation process, and the capacitor materials are deposited within this pre-existing structure. This self-service approach integrates noise reduction functionality into the necessary gate isolation structure, achieving both ease of manufacture and effective noise reduction close to power rails.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces power rail noise, increases capacitance density, and improves frequency response by placing capacitors closer to the power rails, enhancing semiconductor device performance.
Implementation Method 1
decoupling capacitors, such as metal-insulator-metal capacitors (MIMCAPs) formed in the interconnect layers, or deep trench capacitors formed in an insulating layer of a silicon-on-insulator semiconductor substrates, are used to reduce power rail noise
Implementation Method 2
depositing a layer of a ferroelectric material over the second dielectric material
Data Source
AI summary
An approach to forming a semiconductor device where the semiconductor device includes a first power rail that is connected to a decoupling capacitor by way of a first gate. The decoupling capacitor is also connected to a second gate. As such, the decoupling capacitor separates the first gate from the second gate. The decoupling capacitor may include a dielectric liner within a gate cut trench and a ferroelectric material over the dielectric liner. A second power rail may be connected to the decoupling capacitor by way of the second gate. The first gate and the second gate may be inline with respect thereto.