Gate Trench Insulating Structure for IC Reliability
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Solution Overview
Problem
The reliability of the gate insulating layer in integrated circuit (IC) devices is compromised, leading to deterioration in operating performance due to degradation, particularly in highly integrated IC devices.
Innovation Solution
The integration of a gate trench structure with a gate electrode comprising a first sub-gate electrode, a second sub-gate electrode, and a gate capping layer, along with a gate insulating layer that includes a base insulating layer and a reinforcing insulating layer, where the reinforcing insulating layer is thicker on the sidewall portion of the second sub-gate electrode to enhance reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate insulating layer is formed with uniform thickness, then the manufacturing process is simple, but the reliability deteriorates due to degradation at critical regions
Solution Approach 1:
The gate insulating layer is formed with different thicknesses at different locations: a first thickness at the sidewall of the gate electrode and a second thickness at the bottom of the gate trench. This local differentiation reinforces critical regions where degradation is most likely to occur while maintaining manufacturing feasibility through selective deposition processes.
Solution Approach 2:
The patent transitions from a uniform one-dimensional thickness parameter to a two-dimensional thickness distribution, where the gate insulating layer thickness varies both horizontally (sidewall vs. bottom) and vertically (first vs. second thickness). This dimensional approach allows targeted reinforcement of stress-prone regions without uniformly increasing the overall layer complexity.
2Reliability
If the gate insulating layer thickness is increased uniformly, then the reliability improves, but the manufacturing precision requirements increase
Solution Approach 1:
Instead of uniformly increasing the gate insulating layer thickness throughout the entire structure, the patent applies increased thickness (second thickness) specifically at the bottom of the gate trench where degradation is most critical, while maintaining a smaller first thickness at the sidewall. This localized approach improves reliability without requiring uniform high-precision control across the entire structure.
Solution Approach 2:
The patent changes the thickness parameter of the gate insulating layer from a single uniform value to two distinct values (first thickness and second thickness) at different locations. This parameter differentiation allows optimization of reliability at critical regions while maintaining manageable manufacturing precision requirements through selective deposition or epitaxial growth processes.
3Reliability
If a single-layer gate insulating structure is used, then the device complexity is low, but the operating performance deteriorates due to degradation
Solution Approach 1:
The gate insulating layer is configured with different thicknesses at different locations (first thickness at sidewall, second thickness at bottom), creating local quality variations that enhance reliability at degradation-prone regions. This localized reinforcement provides improved operating performance without requiring a complete multi-layer structural overhaul.
Solution Approach 2:
The patent enhances the gate insulating layer configuration by introducing thickness variation in the vertical and horizontal dimensions, transforming a simple uniform layer into a strategically varied structure. This dimensional differentiation improves reliability and operating performance while maintaining relatively simple fabrication processes compared to true multi-layer configurations.
Data Source
AI summary
An integrated circuit (IC) device includes a gate trench formed inside a substrate, the gate trench including a bottom portion and a sidewall portion, a gate electrode structure disposed apart from the bottom portion and the sidewall portion of the gate trench, the gate electrode structure including a gate electrode including a first sub-gate electrode formed in a lower portion of the gate trench and a second sub-gate electrode formed on the first sub-gate electrode and a gate capping layer formed on the second sub-gate electrode, and a gate insulating layer formed between the gate trench and the gate electrode structure, the gate insulating layer including a base insulating layer formed between the bottom portion and the sidewall portion of the gate trench and the gate electrode structure and a reinforcing insulating layer formed on a sidewall portion of the second sub-gate electrode.