Semiconductor Gate Trench Layout for Stable Linear-Mode Operation
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Solution Overview
Problem
Semiconductor devices face challenges in achieving stable operation at high temperatures and maintaining low transconductance and On-resistance, particularly in linear mode applications, due to limitations in channel formation and hotspot formation.
Innovation Solution
The semiconductor device incorporates elongated gate trenches and additional gate regions extending perpendicular to the active region, allowing for the creation of additional channels with lower threshold voltage, increased channel area, and optimized field plate geometries to enhance stability and reduce On-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional gate regions are added to increase channel area and reduce On-resistance, then the device complexity increases
Solution Approach 1:
The gate structure is segmented into multiple independent gate regions (first gate region, second gate region, and additional gate region) that can be controlled separately. Each gate region is formed in its own gate trench and can independently control channel formation in different areas of the active region, allowing for optimized performance in different operating conditions.
Solution Approach 2:
The additional gate region extends in the second lateral direction (perpendicular to the first lateral direction), adding a dimensional aspect to the gate structure. This creates channels that run perpendicular to the main elongated gates, effectively increasing the total channel area without simply extending the length of existing gates.
2Reliability
If elongated gate trenches are used to reduce transconductance, then the channel area is reduced
Solution Approach 1:
The invention merges two different gate configurations: elongated gates that extend in the first lateral direction (for reduced transconductance and temperature stability) with additional gates that extend in the second lateral direction (for increased channel area). The combination of these perpendicular gate structures achieves both temperature stability and low On-resistance simultaneously.
Solution Approach 2:
Different gate regions provide different local characteristics: the elongated gate regions (first and second gates) provide temperature stability and controlled transconductance, while the additional gate region provides increased channel area and reduced On-resistance. Each gate region is optimized for its specific function within the overall device structure.
Data Source
AI summary
The disclosure relates to a semiconductor device having a first active region, a plurality of elongated gate regions having an elongated extension in a first lateral direction, respectively, a plurality of elongated field plate regions having an elongated extension in the first lateral direction, respectively, and a first additional gate region, wherein a first one of the elongated gate regions is arranged in a first elongated gate trench at a first side of the first active region, and a second one of the elongated gate regions is arranged in a second elongated gate trench at a second side of the first active region, the second side lying opposite to the first side with respect to a second lateral direction, and wherein the first additional gate region is arranged in a first additional gate trench which extends at least proportionately in the second lateral direction through the first active region.