Gate Valve Pressure Equalization for Clean Substrate Transfer

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Solution Overview

Problem

During substrate processing, such as semiconductor wafer manufacturing, maintaining controlled and sanitary conditions is crucial to prevent contamination and ensure product quality, particularly when transferring substrates between chambers, as existing technologies fail to effectively manage pressure differentials to minimize interfacial oxygen deposition and contamination.

Innovation Solution

The system adjusts gas pressures in the substrate handling and reaction chambers to ensure a predetermined pressure differential of 0.75 torr or less before a gate valve opening event, using pressure sensors and control valves to maintain the substrate handling chamber pressure within or equal to the reaction chamber pressure plus a predetermined amount, thereby reducing gas interchange and contamination.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If gate valve is opened to transfer substrate between chambers, then substrate transfer is enabled, but interfacial oxygen deposition and contamination occur due to pressure differential

Engineering Contradiction:

Improvesubstrate transferVSAvoidinterfacial oxygen deposition and contamination

Core Design Contradiction:

Ease of operationVSObject-affected harmful factors

Solution Approach 1:

The system equalizes pressure between the substrate handling chamber and reaction chamber before opening the gate valve. Pressure sensors detect the pressure differential, and control valves adjust gas flow to balance pressures, preventing harmful gas interchange and oxygen deposition when the valve opens.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

Pressure sensors continuously monitor the pressure differential between chambers and provide feedback to the control system. The control valves receive this feedback and automatically adjust gas flow to maintain pressure equilibrium, eliminating contamination without manual intervention.

Inventive Principle:

Principle #23Feedback

2Object-affected harmful factors

If pressure control is implemented between chambers, then contamination is reduced, but system complexity increases

Engineering Contradiction:

ImprovecontaminationVSAvoidpressure control system

Core Design Contradiction:

Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The pressure control system operates autonomously using self-service principles. Pressure sensors automatically detect differentials, control valves self-regulate gas flow based on detected conditions, and the system maintains pressure equilibrium without external intervention, reducing the need for complex manual control mechanisms.

Inventive Principle:

Principle #25Self-service

3Device complexity

If pressure differential is not controlled, then system operation is simpler, but product quality degrades

Engineering Contradiction:

Improvepressure control operationVSAvoidproduct quality

Core Design Contradiction:

Device complexityVSManufacturing precision

Solution Approach 1:

The system dynamically changes the pressure parameter between chambers to maintain equilibrium. By adjusting pressure conditions through controlled gas flow rather than maintaining fixed pressure levels, the system ensures high manufacturing precision while keeping operational complexity manageable through automated parameter adjustment.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively reduces interfacial oxygen deposition and contamination during substrate transfer, improving the quality of multilayer products by maintaining precise pressure control between chambers, ensuring the substrate handling chamber pressure is within the gate valve opening pressure range.

Implementation Method 1

measuring the reaction chamber pressure using a reaction chamber pressure sensor; measuring a substrate handling chamber pressure in the substrate handling chamber using a substrate handling chamber pressure sensor

Methodology Applied

Scientific EffectPressure measurement:

Implementation Method 2

adjusting pressure in the substrate handling chamber using a substrate handling chamber pressure control valve to a pressure within a gate valve opening pressure range

Methodology Applied

Scientific EffectGas pressure control:

Implementation Method 3

reducing gas interchange and contamination; reducing interfacial oxygen deposited on a substrate surface during substrate transfer

Methodology Applied

Scientific EffectGas flow:

Data Source

PatentUS20240175138A1Systems and methods for controlling pressure in substrate processing systems

Publication Date: 2024.05.30 ASM IP HLDG BV

AI summary

Systems and methods controlling the pressure differential between two sealed chambers connected by a gate valve in preparation for a gate valve opening event. Such systems and methods may adjust gas pressure in at least one of the chambers, if needed, until the pressure differential between the two chambers is at a predetermined pressure differential level. In some more specific examples, one chamber may constitute a substrate handling chamber, the other chamber may constitute a reaction chamber (e.g., for depositing one or more layers on a surface of a substrate), and the gate valve opening event may allow a substrate to be transferred from one chamber to the other (e.g., from the reaction chamber into the substrate handling chamber).