Gate Via Layout for Process Charge Release in Semiconductor Devices

Solution Overview

Problem

Charges generated during the fabrication of semiconductor devices can lead to low yield if not properly managed, as existing technologies fail to effectively release these charges.

Innovation Solution

The semiconductor device design incorporates a second via contact with a smaller distance to its channel compared to the first via contact, allowing for efficient charge release without affecting the device's operation, by positioning the second via contact on the gate electrode of a second transistor such that its bottom surface is lower than the top surface of the channel, enabling charge discharge through the second transistor.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If via contacts are formed at standard distances from channels, then device operation is maintained, but charges generated during fabrication cannot be effectively released

Engineering Contradiction:

Improvecharge release capabilityVSAvoidmanufacturing yield

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The patent applies local quality by creating asymmetric via contact configurations where the second via contact is positioned at a different distance from its channel compared to the first via contact. Specifically, the second via contact is formed such that its bottom surface is lower than the top surface of the channel, enabling it to serve as a charge release path while the first via contact maintains standard positioning for normal device operation. This localized structural differentiation allows the device to simultaneously maintain operational reliability and achieve effective charge release.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent segments the via contact function into two distinct roles: the first via contact serves standard electrical connection purposes, while the second via contact is specifically designed and positioned to serve as a charge release path. By dividing the via contact structure into functionally distinct components with different geometries and positions, the patent enables simultaneous achievement of normal device operation and effective charge dissipation, thereby resolving the contradiction between reliability and manufacturing yield.

Inventive Principle:

Principle #1Segmentation

2Reliability

If the second via contact is positioned closer to the channel, then charge release efficiency is improved, but device operation may be affected

Engineering Contradiction:

Improvecharge release efficiencyVSAvoiddevice functionality

Core Design Contradiction:

ReliabilityVSEase of operation

Solution Approach 1:

The patent applies local quality by creating asymmetric via contact configurations where the second via contact is positioned at a different distance from its channel compared to the first via contact. Specifically, the second via contact is formed such that its bottom surface is lower than the top surface of the channel, enabling it to serve as a charge release path while the first via contact maintains standard positioning for normal device operation. This localized structural differentiation allows the device to simultaneously maintain operational reliability and achieve effective charge release.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent uses the gate electrode as an intermediary structure that enables the second via contact to be positioned closer to the channel without directly interfering with channel operation. The via contact connects to the gate electrode, which acts as a mediator to provide a charge release path while isolating the channel from direct electrical interference. This intermediary approach allows close positioning for efficient charge release while maintaining device functionality.

Inventive Principle:

Principle #24Intermediary (Mediator)

Data Source

PatentUS20240405127A1Semiconductor device capable of releasing process charge, and method for manufacturing the same

Publication Date: 2024.12.05 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor device includes a first transistor, a first via contact, a second transistor and a second via contact. The first transistor includes a channel and a gate electrode. The first via contact is disposed on the gate electrode of the first transistor, and corresponds in position to the channel of the first transistor. The second transistor includes a channel and a gate electrode. The second via contact is disposed on the gate electrode of the second transistor, and corresponds in position to the channel of the second transistor. A distance between the second via contact and the channel of the second transistor is smaller than a distance between the first via contact and the channel of the first transistor.