FET Gate Voltage Scaling for Low-Distortion Audio and USB Switching

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Solution Overview

Problem

Integrated circuits face challenges in accommodating different data types, such as high-speed USB data and low-speed audio data, due to competing requirements for switching devices that affect signal non-linearity and harmonic distortion.

Innovation Solution

The use of field effect transistors (FETs) with gate drive circuits that generate voltage scaling and summation to maintain constant gate-to-source voltages, ensuring linear operation and reducing total harmonic distortion (THD) in analog audio signals, while minimizing impact on high-speed USB data transmission.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If FETs are made larger to handle high-power audio signals, then audio signal linearity and power handling improve, but the device area and impact on high-speed USB data transmission increase

Engineering Contradiction:
Improveaudio signal linearityVSAvoidFET device area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent applies parameter changes by dynamically adjusting the gate voltage of the FET based on the audio signal characteristics. By modifying the gate voltage parameter in real-time, the FET operates in different regions to achieve optimal linearity for audio signals while maintaining compatibility with high-speed USB data transmission, thus resolving the contradiction between audio signal linearity and device area.

Inventive Principle:
Principle #35Parameter changes

2Speed

If FETs are made smaller to accommodate high-speed USB data transmission, then USB data transmission speed and device integration improve, but audio signal handling capability and linearity deteriorate

Engineering Contradiction:
ImproveUSB data transmission speedVSAvoidaudio signal linearity
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent implements dynamics by using a gate voltage adjustment circuit that dynamically modifies the FET's operating characteristics. The circuit responds to audio signal conditions and adjusts the gate voltage accordingly, enabling the FET to adapt its behavior for optimal audio performance while maintaining small size for USB data transmission compatibility.

Inventive Principle:
Principle #15Dynamics

3Device complexity

If a single FET size is used for both audio and USB data, then device complexity is reduced, but performance for both audio linearity and USB data transmission deteriorates

Engineering Contradiction:
ImproveFET configuration simplicityVSAvoidsignal transmission quality
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent applies universality by designing a gate voltage adjustment circuit that enables a single FET to perform multiple functions effectively. The circuit allows the FET to optimize its operation for different signal types (audio and USB data) by dynamically adjusting the gate voltage, thus achieving multi-functionality without requiring separate FETs for each application.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS11522572B1Audio non-linearity cancellation for switches for audio and other applications
Publication Date: 2022.12.06 QUALCOMM INC
  • US11522572B1 patent drawing
  • US11522572B1 patent drawing
  • US11522572B1 patent drawing

AI summary

An aspect includes an apparatus including a first amplifier; a first field effect transistor (FET) including a first source coupled to an output of the first amplifier, and a first drain for coupling to a first load; and a first gate drive circuit including an input coupled to the output of the first amplifier and an output coupled to a first gate of the first FET. Another aspect includes a method including amplifying a first audio signal using a first audio amplifier to generate a first voltage; generating a first gate voltage based on the first voltage; applying the first gate voltage to a first gate of a first field effect transistor (FET) coupled between the first audio amplifier and a first audio transducer; and applying the first voltage to a first source of the first FET.