Gate Electrode Work Function Profile for Low-Leakage Memory Cells
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Solution Overview
Problem
Semiconductor devices face challenges in achieving high integration density, fast operating speed, and low power consumption, which are essential for modern electronic devices.
Innovation Solution
The semiconductor device incorporates a gate electrode with a work function adjusting material, where the atomic concentration of this material is higher in the lower and upper portions compared to the center portion, enhancing the work function and reducing gate-induced drain leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the integration density of the semiconductor device is increased to achieve fast operating speed and low power consumption, then the operating performance is improved, but the fabrication complexity and difficulty increase
Solution Approach 1:
The gate electrode is designed with non-uniform work function adjusting material distribution, where the atomic concentration varies across different regions (higher at lower and upper portions, lower at center portion). This local quality variation allows different parts of the gate electrode to serve different functions: the center portion maintains lower work function for high on-current, while the lower and upper portions have higher work function to suppress gate-induced drain leakage, thereby improving device performance without requiring complex external circuits or structures
Solution Approach 2:
The work function of the gate electrode is optimized by controlling the atomic concentration distribution of the work function adjusting material during fabrication. By adjusting the deposition conditions, doping concentration, or annealing parameters, the work function can be precisely tuned in different regions of the gate electrode, enabling simultaneous achievement of high on-current and low leakage without changing the fundamental device structure
2Reliability
If the work function adjusting material concentration is increased in the gate electrode to reduce gate-induced drain leakage, then the reliability is improved, but the on-current may be reduced
Solution Approach 1:
The gate electrode employs spatially varying work function adjusting material concentration, with higher concentration at the lower and upper portions to suppress gate-induced drain leakage and lower concentration at the center portion to maintain high on-current. This local differentiation allows simultaneous optimization of both reliability and energy efficiency without compromise
Solution Approach 2:
The gate electrode is effectively segmented into different functional regions along its length, with the center portion optimized for current conduction and the lower/upper portions optimized for leakage suppression. This segmentation enables independent optimization of conflicting performance parameters in different spatial zones
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves electrical characteristics and reliability by reducing gate-induced drain leakage and increasing on-current, thereby enhancing the performance of semiconductor devices.
Implementation Method 1
The gate electrode may include a work function adjusting material, and an atomic concentration of the work function adjusting material in each of lower and upper portions of the gate electrode may be higher than an atomic concentration of the work function adjusting material in a center portion of the gate electrode
Data Source
AI summary
A semiconductor device may include a substrate, a bit line extending in a first direction parallel to a top surface of the substrate, a semiconductor pattern on the bit line and extending in a third direction perpendicular to the top surface of the substrate, and a gate electrode on a side surface of the semiconductor pattern and extending in a second direction parallel to the top surface of the substrate and intersecting the first direction. The gate electrode may include a work function adjusting material, and a first atomic concentration of the work function adjusting material in each of lower and upper portions of the gate electrode may be higher than a second atomic concentration of the work function adjusting material in a center portion of the gate electrode between the lower and upper portions.