Gated Diode TRNG with Feedback Switching for Stable Random Bits
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Solution Overview
Problem
Existing true random number generators (TRNGs) face challenges in being integrated into the CMOS process due to complex additional circuits, poor device stability, and difficulty in generating stable random bit strings without amplification and sampling circuits, limiting their application and energy efficiency.
Innovation Solution
A gated diode-based TRNG that utilizes a p+-i-n+ diode structure with a control transistor to generate random bits through a feedback loop phenomenon, amplifying random fluctuations without additional circuits, and controlling the probability of bit occurrence via voltage application.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional TRNG technologies (SRAM metastability, ring oscillator jitter) are used to generate random bits, then randomness quality is improved, but device complexity and circuit area increase significantly
Solution Approach 1:
The patent extracts the random bit generation function from complex circuit systems (SRAM, ring oscillators) and implements it in a single gated diode element. By removing the need for peripheral amplification and sampling circuits, the solution reduces device complexity while maintaining randomness quality through the intrinsic noise characteristics of the gated diode channel.
Solution Approach 2:
The gated diode structure performs self-amplification of random fluctuations through its intrinsic feedback mechanism. The channel noise is automatically converted and amplified into random bit outputs without requiring external amplification circuits, enabling the device to serve its own signal conditioning needs.
2Reliability
If non-silicon channel materials (FRAM, ReRAM, MRAM) are used to achieve high randomness, then randomness quality is improved, but ease of manufacture deteriorates due to CMOS incompatibility
Solution Approach 1:
The patent uses a silicon-based gated diode with a homogeneous material composition compatible with standard CMOS fabrication processes. This eliminates the need for non-silicon materials (ferroelectric, resistive, magnetic layers) while maintaining randomness quality through the gated diode's channel noise mechanism, thereby improving ease of manufacture.
3Device complexity
If RTN-based TRNG using single MOSFET is used to reduce circuit area, then device complexity is reduced, but reliability deteriorates due to current amplification requirements and post-processing needs
Solution Approach 1:
The gated diode structure performs self-amplification of random fluctuations through its intrinsic feedback mechanism. The channel noise is automatically converted and amplified into random bit outputs without requiring external amplification circuits, enabling the device to serve its own signal conditioning needs.
4Reliability
If additional amplification and sampling circuits are added to improve random bit output stability, then reliability is improved, but device complexity increases
Solution Approach 1:
The gated diode structure performs self-amplification of random fluctuations through its intrinsic feedback mechanism. The channel noise is automatically converted and amplified into random bit outputs without requiring external amplification circuits, enabling the device to serve its own signal conditioning needs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The gated diode-based TRNG generates stable random bit strings efficiently, enabling secure encryption and decryption without complex circuits, and demonstrates high randomness and stability through CMOS-compatible manufacturing.
Implementation Method 1
generating a random bit through a probabilistic switching operation via the feedback loop phenomenon in the channel region of a gated diode
Implementation Method 2
a true random number generator technology using random telegraph noise (RTN) generated from a MOSFET single element
Data Source
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Figure 2A
AI summary
Disclosed is a gated diode-based true random number generator capable of encrypting information. More particularly, a gated diode-based true random number generator according to an embodiment of the present disclosure includes a gated diode where a p+-i-n+ diode structure is positioned between a drain terminal and a source terminal, a gate-insulating film is positioned on an intrinsic region of the p+-i-n+ diode structure, and two gate terminals are positioned on the gate-insulating film; and a control transistor where a control drain terminal is connected to the source terminal, wherein the control gate terminal and the control source terminal are constituted together with the control drain terminal, and the control transistor controls electron injection into the p+-in+ diode structure according to control of a gate voltage VMOS applied through the control gate terminal, wherein the gated diode forms a potential barrier in an intrinsic region by electrostatic doping as the intrinsic region changes to one of an n* channel region and a p* channel region based on different voltages applied through the two gate terminals, and outputs a random bit as one of a positive feedback loop and a negative feedback loop related to the formed potential barrier is randomly formed according to electron injection fluctuations based on the controlled electron injection.