Gated Diode Memory Cells With Direct Tunneling Gate Stack
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Solution Overview
Problem
Conventional memory technologies face challenges in achieving fast operating speeds with reduced power consumption, high data retention, and scalability, particularly in non-volatile memory cells, which are essential for meeting the requirements of various memory levels (L1 to L5) in electronic systems.
Innovation Solution
The implementation of gated diode memory cells with a gate stack structure that includes direct tunneling, trapping, and blocking materials, allowing for control over turn-off characteristics and programming performance, enabling faster cycle times and reduced power consumption, and compatibility with CMOS technology.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional FET-based or thyristor-based NVM structures are used, then data retention and non-volatility are achieved, but programming speed is slow and power consumption is high
Solution Approach 1:
The patent changes the fundamental operating parameters by using a gated diode structure instead of FET or thyristor, enabling programming speeds in the nanosecond range compared to microsecond ranges in conventional NVMs. The gate-controlled diode allows precise control of turn-off characteristics, achieving fast programming with reduced power consumption through direct tunneling mechanisms
Solution Approach 2:
The gate stack structure employs composite materials including direct tunneling material, trapping material, and blocking material in specific sequences. This composite structure enables simultaneous achievement of fast tunneling for high-speed programming and controlled charge storage for data retention, resolving the contradiction between speed and power
2Productivity
If faster cycle times are achieved through gated diode structure, then programming speed improves, but device complexity increases due to multi-layer gate stack
Solution Approach 1:
The gate stack is segmented into distinct functional layers: direct tunneling material for fast charge injection, trapping material for data storage, and blocking material for charge confinement. This segmentation allows each layer to be optimized independently while working together to achieve high-speed programming with controlled complexity
Solution Approach 2:
The gated diode structure serves multiple functions simultaneously: it provides fast programming through direct tunneling, data retention through charge trapping, and controlled turn-off characteristics through gate modulation. This multi-functionality reduces the need for additional components, managing device complexity while maintaining high productivity
3Use of energy by moving object
If reduced programming voltages are implemented, then power consumption decreases, but achieving sufficient programming speed becomes difficult
Solution Approach 1:
The patent replaces conventional charge injection mechanisms with quantum mechanical direct tunneling through the gate stack. This substitution enables efficient charge transfer at lower voltages while maintaining high programming speeds, as tunneling probability is governed by quantum mechanics rather than classical charge transport limitations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in higher programming speed, reduced programming voltages, increased data retention, and lower energy consumption compared to FET-based and thyristor-based NVMs, while being scalable and compatible with CMOS logic technology, thus addressing the limitations of conventional memory technologies.
Implementation Method 1
The gate stack structure controls the turn-off characteristics of the memory cell, thereby controlling the cycle time and programming performance of the memory cell which may range from fractions of millisecond to less than 1 ns
Implementation Method 2
The gate stack structure includes a direct tunneling material, a trapping material, and a blocking material
Data Source
AI summary
Examples relate generally to the field of semiconductor memory devices. In an example, a memory cell may include an access device coupled to an access line and a gated diode coupled to the access device. The gated diode may include a gate stack structure that includes a direct tunneling material, a trapping material, and a blocking material.