Gas Cluster Ion Beam Scan Size and Position Control

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Solution Overview

Problem

Beam processing systems, such as GCIB, suffer from poor throughput due to scanning and processing the entire workpiece, thereby treating areas that do not need correction and failing to limit the beam scan to the target region for precise processing.

Innovation Solution

A method and system for location specific processing where a microelectronic workpiece is processed using a beam scan size smaller than its dimensions, with controlled beam position and offset to align with the target region for precise correction, enhancing throughput and uniformity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the beam scan covers the entire workpiece to ensure complete coverage, then processing completeness is improved, but throughput deteriorates due to treating areas that do not need correction

Engineering Contradiction:
Improveprocessing completenessVSAvoidthroughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent applies local quality by adjusting the beam scan size dynamically based on the specific processing needs of different workpiece regions. Instead of using a uniform scan size for the entire workpiece, the system modifies the scan parameters to match the actual correction requirements of target regions, thereby avoiding unnecessary processing in areas that do not need correction while maintaining complete coverage where needed.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent implements dynamics by making the beam scan size adjustable and adaptive during the processing operation. The scan size is not fixed but can be modified in real-time based on feedback from the workpiece characteristics and processing requirements, allowing the system to optimize between coverage completeness and processing speed dynamically throughout the operation.

Inventive Principle:
Principle #15Dynamics

2Productivity

If the beam scan size is reduced to limit processing to the target region, then throughput is improved, but manufacturing precision deteriorates due to potential incomplete coverage

Engineering Contradiction:
ImprovethroughputVSAvoidcoverage completeness
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The system dynamically adjusts the beam scan size based on real-time processing requirements. When processing target regions that require precise correction, the scan size is reduced to limit processing to only the necessary areas, improving throughput. When complete coverage is needed, the scan size is increased accordingly, ensuring manufacturing precision is maintained.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent applies local quality by tailoring the beam scan size to the specific characteristics of different regions being processed. Target regions requiring correction receive focused, smaller scan coverage, while other areas receive appropriate coverage based on their specific needs, optimizing both throughput and precision locally rather than applying a uniform approach.

Inventive Principle:
Principle #3Local quality

3Productivity

If the beam scan size is dynamically adjusted based on target region, then productivity is improved by reducing unnecessary processing, but device complexity increases due to additional control requirements

Engineering Contradiction:
ImprovethroughputVSAvoidcontrol system complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent implements parameter changes by dynamically modifying the beam scan size parameter based on processing requirements. The system changes this key parameter in response to different target regions and processing needs, allowing productivity improvement through reduced unnecessary processing while managing complexity through systematic parameter control rather than fundamental system redesign.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The system uses feedback mechanisms to adjust the beam scan size dynamically. Information about the workpiece characteristics and processing requirements is fed back to the control system, which then adjusts the scan parameters accordingly. This feedback loop enables productivity improvement while keeping device complexity manageable through intelligent, data-driven control rather than overly complex hardware modifications.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves throughput and uniformity by precisely targeting the correction area, reducing unnecessary processing and optimizing beam scan size and position for enhanced corrective capability.

Implementation Method 1

Clusters of gas molecules are formed by condensation that occurs during expansion of a high pressure gas mixture through a nozzle

Methodology Applied
Scientific EffectCondensation: Condensation

Implementation Method 2

A beam of these clusters is directed through an electron source, where they are ionized by electron impact

Methodology Applied
Scientific EffectIonization: Ionisation

Implementation Method 3

accelerated by up to 60 KV into the process chamber

Methodology Applied
Scientific EffectElectromagnetic acceleration: Electromagnetic Induction

Data Source

PatentUS10256095B2Method for high throughput using beam scan size and beam position in gas cluster ion beam processing system
Publication Date: 2019.04.09 美国泰尔制造与工程公司
  • US10256095B2 patent drawing
  • US10256095B2 patent drawing
  • US10256095B2 patent drawing

AI summary

A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.