Gd2O3(100) on Si(100) Interface Electron Mobility

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Solution Overview

Problem

The speed of semiconductor components, such as MOSFETs, is limited by the mobility of electrons at their interfaces, restricting the performance of electronic devices.

Innovation Solution

The use of a gadolinium oxide (Gd2O3) layer with a 100 orientation on an n-type Si(100) substrate enhances electron mobility through epitaxial growth, achieving a mobility of 1760 cm2/V·s at room temperature by creating a two-dimensional confinement similar to transfer doping, with a Schottky metal contact modulating the carriers for improved field effect transistors.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If conventional semiconductor materials and structures are used, then device structure is simple and manufacturing is easy, but electron mobility at interfaces is limited and device speed is restricted

Engineering Contradiction:

Improveelectron mobilityVSAvoidmultilayered structure complexity

Core Design Contradiction:

SpeedVSDevice complexity

Solution Approach 1:

The patent employs a composite material system consisting of Gd2O3(100) layer grown on n-type Si(100) substrate. This heterostructure combines two different materials with complementary properties: gadolinium oxide provides high electron mobility at the interface while silicon provides a stable substrate. The composite nature of this material system enables achieving 1760 cm2/V·s electron mobility, significantly exceeding conventional single-material semiconductor limits.

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The invention transitions from bulk three-dimensional semiconductor material to a two-dimensional interface between Gd2O3 and Si. By confining electrons to the two-dimensional interface region, the patent exploits quantum confinement effects and interface states that enable enhanced mobility. This dimensional reduction from bulk to interface is key to achieving the record-high electron mobility of 1760 cm2/V·s at room temperature.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Productivity

If electron mobility is enhanced through material innovation, then device performance improves, but manufacturing process complexity increases

Engineering Contradiction:

Improvedevice efficiencyVSAvoidepitaxial growth process complexity

Core Design Contradiction:

ProductivityVSEase of manufacture

Solution Approach 1:

The patent utilizes precise control of deposition parameters including substrate temperature (200°C), oxygen partial pressure (10^-7 to 10^-6 Torr), and crystallographic orientation (100). By optimizing these parameters, the epitaxial growth process achieves high-quality Gd2O3(100) layers with enhanced electron mobility. The parameter optimization enables reproducible manufacturing of the heterostructure with consistent performance.

Inventive Principle:

Principle #35Parameter changes

3Reliability

If interface quality is improved through epitaxial growth, then electron mobility increases, but process conditions become more restrictive

Engineering Contradiction:

Improveinterface qualityVSAvoidprocess condition control

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent achieves high interface quality by ensuring perfect crystallographic matching between Gd2O3(100) and Si(100) at the interface. The local quality of the interface region is optimized through matched orientation and controlled growth conditions, creating a defect-free boundary that enables high electron mobility. This local optimization at the critical interface region delivers reliable performance despite the complexity of process control.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly enhances electron mobility and carrier concentration, leading to more efficient field effect transistors with improved performance and efficiency in semiconductor devices.

Implementation Method 1

evaporating the gadolinium oxide so that the gadolinium oxide orientated in the 100 direction (Gd2O3 (100)) is grown on a layer of the silicon substrate

Methodology Applied

Scientific EffectEvaporation: Evaporation

Implementation Method 2

The epitaxial growth of the Gd2O3(100) on both n-type and p-type Si(100) is obtained when the Gd2O3 is deposited on a hydrogen-passivated, unreconstructed Si(100) surface

Methodology Applied

Scientific EffectEpitaxy: Epitaxy

Data Source

PatentUS9000432B2Enhanced electron mobility at the interface between GD2O3(100)/N-SI(100)

Publication Date: 2015.04.07 THE UNIV OF NORTH CAROLINA AT CHAPEL HILL

AI summary

A multilayered structure is provided. The multilayered structure may include a silicon substrate and a film of gadolinium oxide disposed on the silicon substrate. The top surface of the silicon substrate may have silicon orientated in the 100 direction (Si(100)) and the gadolinium oxide disposed thereon may have an orientation in the 100 direction (Gd2O3(100)).