CMP Slurry for Ge Fin Recess Control via Methylpyridine
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving optimal substrate planarization during the fabrication of advanced ICs, particularly with the formation of fin elements in FinFET devices, where traditional CMP slurries can excessively recess germanium fin elements, impacting device performance.
Innovation Solution
A novel CMP slurry composition is developed, incorporating an oxidant and a Ge removal rate enhancer, such as a methylpyridine compound or derivative, which provides high Ge- or SiGe-to-dielectric material selectivity and a low rate of recess formation, enhancing polishing throughput and pot-life.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional CMP slurry is used for polishing Ge or SiGe layers, then polishing can be performed, but excessive recess formation occurs in germanium fin elements
Solution Approach 1:
The patent modifies the chemical composition parameters of the CMP slurry by incorporating specific oxidants (hydrogen peroxide, potassium peroxodisulfate, ammonium peroxodisulfate, sodium peroxodisulfate, potassium peroxymonosulfate, peracetic acid, or tert-butyl hydrogen peroxide) and Ge removal rate enhancers (methylpyridine compounds or derivatives) to change how the slurry interacts with Ge material, reducing excessive recess formation while maintaining polishing effectiveness
Solution Approach 2:
The patent introduces intermediary substances (oxidants and Ge removal rate enhancers) that mediate between the mechanical polishing action and the Ge material, controlling the chemical-mechanical interaction to achieve selective removal of Ge or SiGe while protecting fin element integrity and reducing harmful recess formation
2Productivity
If conventional CMP processes are used, then substrate planarization can be achieved, but device performance is impacted due to fin element recess
Solution Approach 1:
The patent changes the chemical parameters of the CMP process by using specific oxidants and Ge removal rate enhancers, which modify the removal characteristics to maintain high polishing efficiency while protecting fin element dimensions and ensuring device performance requirements are met
Solution Approach 2:
The patent employs a formulated slurry composition with specific oxidants and Ge removal rate enhancers that provides controlled chemical action during polishing, creating a feedback mechanism where the chemical composition adjusts the mechanical removal rate to achieve both high productivity and reliable device performance
3Manufacturing precision
If standard CMP slurry composition is used, then polishing can proceed, but Ge removal rate is insufficient for high-performance device fabrication
Solution Approach 1:
The patent optimizes the chemical composition parameters of the slurry by incorporating specific oxidants and Ge removal rate enhancers (methylpyridine compounds or derivatives) to increase the Ge removal rate while maintaining precise control over fin element dimensions through selective chemical action
Solution Approach 2:
The patent creates a composite slurry formulation combining multiple components (oxidants, Ge removal rate enhancers, and other CMP ingredients) that work synergistically to achieve both high Ge removal rate and precise fin element dimensional control, enhancing overall polishing performance for high-performance device fabrication
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The improved slurry composition achieves high Ge or SiGe removal rates with reduced recess formation, maintaining efficacy for an extended period, thus supporting the fabrication of high-performance FinFET devices with improved germanium-to-oxide selectivity.
Implementation Method 1
The slurry composition includes an oxidant and a Ge removal rate enhancer
Implementation Method 2
a Ge removal rate enhancer, such as a methylpyridine compound or derivative
Data Source
AI summary
A CMP slurry composition which provides for a high Ge- or SiGe-to-dielectric material selectivity a low rate of Ge or SiGe recess formation includes an oxidant and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound. In some examples, the slurry composition also includes an etching inhibitor. In some cases, the slurry composition may include an abrasive, a surfactant, an organic complexant, a chelating agent, an organic or inorganic acid, an organic or inorganic base, a corrosion inhibitor, or a buffer. The slurry composition may be distributed onto a surface of a polishing pad disposed on a platen that is configured to rotate. Additionally, a workpiece carrier configured to house a substrate may bring the substrate into contact with the rotating polishing pad and thereby polish the substrate utilizing the slurry composition.