Semiconductor Substrate Bonding via Ge-Cu Alloy Diffusion
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Solution Overview
Problem
In semiconductor apparatus fabrication, achieving a low-contact-resistance bond between bonded substrates is challenging due to high-contact-resistance materials generated at the interface, leading to instability and potential failure of the semiconductor apparatus.
Innovation Solution
A method involving a Ge layer adjacent to one silicon substrate and a Cu layer adjacent to the other, with a metallic alloy formed between them under specific temperature and compressive force conditions, to create a low-resistance bond.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If high-contact-resistance materials are present at the bonding interface, then substrate bonding can be achieved, but semiconductor apparatus stability and performance deteriorate
Solution Approach 1:
The bonding interface uses a composite contact structure consisting of Al or Al alloy, Ge, and Cu or Cu alloy layers. This composite material structure combines the advantages of each material: Al/Al alloy provides good bonding capability, Ge provides low contact resistance, and Cu/Cu alloy provides excellent electrical conductivity. This composite approach allows substrate bonding to be achieved while maintaining high apparatus stability.
Solution Approach 2:
The contact resistance parameter at the bonding interface is changed by introducing the Ge intermediate layer and forming specific alloy compositions. The Ge layer, with its unique electrical properties, transforms the high-contact-resistance condition into a low-contact-resistance condition while maintaining the bonding integrity, thus improving apparatus stability without sacrificing ease of manufacture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively forms a low-contact-resistance bond between silicon substrates, enhancing the stability and performance of semiconductor apparatus by reducing interface defects and maintaining alignment during operation.
Implementation Method 1
heating the first and second contacts to form a metallic alloy, wherein the heating is performed at a temperature of about 420° to 500° C. and under a compressive force of about 45 to 55 kN
Data Source
AI summary
The disclosure relates to integrated circuit fabrication, and more particularly to a semiconductor apparatus with a metallic alloy. An exemplary structure for an apparatus comprises a first silicon substrate; a second silicon substrate; and a contact connecting each of the first and second substrates, wherein the contact comprises a Ge layer adjacent to the first silicon substrate, a Cu layer adjacent to the second silicon substrate, and a metallic alloy between the Ge layer and Cu layer.