Ge(II) Source for Phase Change Memory Layer Deposition
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Solution Overview
Problem
Current methods for forming phase change material layers in phase change memory devices require high temperatures and have limitations in achieving conformal coverage and small grain sizes, which can lead to voids and reduced step coverage.
Innovation Solution
A method involving the use of a Ge(II) source, specifically with reduced ligand coordination, is employed to form a Ge-containing phase change material layer by supplying a reaction gas and a Ge(II) source in a reaction chamber, allowing for lower deposition temperatures and improved reactivity, resulting in a Ge-containing phase change material layer with reduced steric hindrance and smaller grain size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to form phase change material layers, then the deposition process can be completed, but high temperatures are required and step coverage is poor with voids forming
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by using Ge(II) sources with reduced ligand coordination instead of conventional Ge(IV) sources. This parameter change enables the deposition to proceed at lower temperatures while improving step coverage and conformality, resolving the contradiction between temperature requirements and manufacturing precision
Solution Approach 2:
The patent employs composite material design by creating phase change material layers with specific compositions (Ge-Sb-Te, Ge-Te, Ge-Sb) through controlled reaction of Ge(II) sources with group 15 and group 16 elements. This composite approach allows optimization of both deposition temperature and layer quality, achieving good step coverage without requiring high temperatures
2Manufacturing precision
If conventional Ge sources are used, then deposition can proceed, but grain size is large and reactivity is limited
Solution Approach 1:
The patent changes the oxidation state parameter of the Ge source from conventional Ge(IV) to Ge(II), which has reduced ligand coordination. This parameter change increases the reactivity of the Ge source, enabling better control over grain size and improving deposition efficiency simultaneously
Solution Approach 2:
The patent extracts or removes ligands from the Ge source to reduce coordination number from 4 (in Ge(IV)) to 2 (in Ge(II)). This extraction of ligands increases the reactivity of the Ge source and allows for smaller grain sizes in the deposited phase change material layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the formation of phase change material layers at reduced temperatures, improving step coverage and conformality on the side walls of contact holes or trenches without voids, and enhancing the reactivity and deposition efficiency.
Implementation Method 1
supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber
Data Source
AI summary
In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.