Grown-Epitaxial-Metal-Mirror for III-Nitride Light Extraction
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Solution Overview
Problem
Current microcavity light-emitting diodes (MCLEDs) face manufacturing complexities and poor current injection due to the use of Distributed Bragg Reflectors (DBRs) and require cumbersome material removal or complicated layering, which limits their efficiency and commercial viability.
Innovation Solution
The implementation of a Grown-Epitaxial-Metal-Mirror (GEMM) layer, which is epitaxially grown and positioned to create optical cavity effects, allowing for precise control of light extraction and improved current injection without the need for additional material removal or complex layering.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If Distributed Bragg Reflectors (DBRs) are used to create optical cavity effects, then light extraction efficiency is improved, but device complexity and manufacturing difficulty increase due to cumbersome material removal and complicated layering
Solution Approach 1:
The patent changes the fundamental parameter of how the reflective layer is created - transitioning from post-growth DBR deposition requiring multiple layers and material removal to in-situ epitaxial growth of the GEMM layer. This parameter change simplifies the manufacturing process while maintaining the optical cavity effect for improved light extraction efficiency.
Solution Approach 2:
The GEMM layer is grown preliminarily during the epitaxial growth process itself, before device completion. This preliminary action eliminates the need for subsequent complex DBR deposition and material removal steps, reducing manufacturing complexity while establishing the optical cavity structure early in the process.
2Loss of energy
If DBRs and complex layering are used, then optical cavity effects are achieved, but current injection performance deteriorates
Solution Approach 1:
The GEMM layer serves multiple functions simultaneously: it provides the reflective surface for optical cavity effects, acts as a conductive layer for current injection, and eliminates the need for separate DBR structures. This multi-functionality resolves the contradiction by improving both light extraction and current injection performance through a single integrated layer.
Solution Approach 2:
The patent merges the reflective layer and current injection layer into a single GEMM layer grown during epitaxy. This merging eliminates the separation between optical and electrical functions that exists in DBR-based structures, thereby improving current injection while maintaining optical cavity effects.
3Loss of energy
If material removal and complex layering are performed, then optical cavity structure is created, but manufacturing time and process steps increase
Solution Approach 1:
The GEMM layer is grown preliminarily during the main epitaxial growth process, completing the optical cavity structure formation before device fabrication continues. This preliminary action eliminates subsequent time-consuming steps for DBR deposition and material removal, reducing total manufacturing time while achieving the same light extraction efficiency.
Solution Approach 2:
The patent combines the formation of the reflective layer with the epitaxial growth process itself, merging two separate operations (epitaxy and DBR deposition/removal) into one continuous process. This merging eliminates intermediate steps and reduces manufacturing time while maintaining the optical cavity structure necessary for improved light extraction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The GEMM layer enhances light extraction efficiency, increases spectral purity and directionality, and simplifies the manufacturing process by eliminating the need for cumbersome material removal and complex layering, while providing superior current injection and reduced static discharge risks.
Implementation Method 1
The implementation of a Grown-Epitaxial-Metal-Mirror (GEMM) layer, which is epitaxially grown and positioned to create optical cavity effects
Implementation Method 2
positioned to create optical cavity effects, allowing for precise control of light extraction
Data Source
AI summary
A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.