Germane Argon Plasma Ion Source Productivity
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Solution Overview
Problem
The formation of germanium and argon ion beams with sufficient beam current without the use of halogen gases has been challenging in semiconductor device manufacturing, particularly in ion implantation processes.
Innovation Solution
Introducing germane and argon into an ion source to form a plasma, allowing for the generation of germanium and argon ion beams with improved beam current, where the flow rates of argon and germane are optimized to enhance ionization efficiency, and no halogen gases are used.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Duration of action of stationary object
If germane is used as the main dopant gas without halogen gases, then the ion source life is extended, but the beam current of germanium ion beam is insufficient
Solution Approach 1:
The patent introduces argon gas as an intermediary substance to mediate between germane and the ion source. The argon gas facilitates the ionization process and enhances beam current extraction without requiring halogen gases, thus extending ion source life while maintaining productivity. The argon acts as a carrier gas that improves the efficiency of germanium ion beam formation from germane.
2Productivity
If argon is used as the main gas for ion beam generation, then the beam current of argon ion beam is improved, but the ionization efficiency decreases without proper second gas addition
Solution Approach 1:
The patent optimizes the flow rate parameters of both argon and germane gases to achieve optimal ionization efficiency. By carefully controlling the ratio and absolute flow rates of these gases, the system maximizes the ionization of argon while using germane to enhance the overall plasma density and beam current extraction efficiency.
3Productivity
If traditional GeF4 is used as dopant gas, then sufficient beam current is achieved, but halogen-induced etching reduces ion source life
Solution Approach 1:
The patent creates an inert atmospheric environment within the ion source by using germane and argon gases instead of halogen-containing gases like GeF4. This inert environment prevents halogen-induced etching of the ion source components, thereby extending ion source life while maintaining sufficient beam current through optimized gas flow parameters and plasma generation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method increases the beam current of both germanium and argon ion beams, improving the efficiency of the ion source and extending the life of the ion source by eliminating halogen-induced etching, while being potentially less expensive than traditional methods.
Implementation Method 1
ionizing the germane and argon to form a plasma
Implementation Method 2
ionizing the germane and argon to form a plasma
Data Source
AI summary
A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam.