Etching Composition for Selective Germanium Removal
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Solution Overview
Problem
The challenge in semiconductor device manufacturing is achieving high etching selectivity and reliability, particularly in removing germanium-containing layers without damaging adjacent silicon-containing layers, which affects the electrical properties and integration density of semiconductor devices.
Innovation Solution
An etching composition comprising peracetic acid, a fluorine compound, an amine compound, and an organic solvent is used to selectively etch germanium-containing layers, optimizing the composition ratios to ensure high etching selectivity and rate of germanium over silicon, thereby improving the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching compositions are used, then the etching process can be performed, but the etching selectivity of germanium-containing layer with respect to silicon-containing layer is insufficient
Solution Approach 1:
The patent changes the chemical composition parameters of the etching solution by incorporating peracetic acid (15-75 wt%), fluorine compound (0.1-10 wt%), amine compound (0.1-5 wt%), and organic solvent (10-70 wt%). This specific parameter combination enables high etching selectivity for germanium-containing layers while protecting silicon-containing layers from damage.
Solution Approach 2:
The patent uses a composite etching solution formulation combining multiple chemical compounds (peracetic acid, fluorine compound, amine compound, and organic solvent) to achieve selective etching. The synergistic effect of these composite components provides both high etching rate for germanium and selectivity to preserve silicon layers.
2Reliability
If etching selectivity is increased to protect silicon layers, then reliability improves, but the etching rate of germanium-containing layer decreases
Solution Approach 1:
The patent optimizes the concentration parameters of each component to achieve both high etching rate and high selectivity. The specific ranges (peracetic acid: 15-75 wt%, fluorine compound: 0.1-10 wt%, amine compound: 0.1-5 wt%, organic solvent: 10-70 wt%) are tuned to maximize germanium etching rate while maintaining silicon layer protection.
Solution Approach 2:
The organic solvent acts as an intermediary component that modulates the reactivity of the etching solution. It controls the interaction between the active etching agents (peracetic acid and fluorine compound) and the semiconductor materials, enabling fast germanium etching while preventing excessive silicon etching.
3Productivity
If high concentration of peracetic acid is used, then etching rate increases, but selectivity decreases and silicon layers are damaged
Solution Approach 1:
The patent carefully controls the peracetic acid concentration within 15-75 wt% range and balances it with other components (fluorine compound: 0.1-10 wt%, amine compound: 0.1-5 wt%, organic solvent: 10-70 wt%). This parameter balancing prevents excessive reactivity that would damage silicon layers while maintaining sufficient etching rate for germanium.
Solution Approach 2:
The organic solvent serves as a mediator that dampens the aggressive etching action of high concentration peracetic acid. It allows the peracetic acid to effectively etch germanium while preventing it from attacking silicon layers, thus maintaining both high etching rate and high selectivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The etching composition effectively removes germanium-containing layers with high selectivity, maintaining the integrity of silicon-containing layers, thereby enhancing the electrical properties and integration density of semiconductor devices.
Implementation Method 1
an etching composition comprising peracetic acid; a fluorine compound; an amine compound; and an organic solvent
Implementation Method 2
a fluorine compound
Data Source
AI summary
Provided are an etching composition and a method for manufacturing a semiconductor device using the same. According to embodiments, the etching composition may comprise from about 15 wt % to about 75 wt % of peracetic acid; a fluorine compound; an amine compound; and an organic solvent.