Germanium-Implanted Gate Electrode for Stable HV Transistors

The patent applies different treatments to different regions of the transistor: the gate electrode undergoes pre-amorphization implantation (PAI) to prevent dopant diffusion into the channel, while the source/drain regions undergo selective amorphization. This local differentiation allows the gate to maintain precise dopant control for stable threshold voltage, while source/drain regions achieve proper doping for carrier injection, resolving the threshold voltage variation problem in scaled transistors.

The patent performs pre-amorphization implantation of the gate electrode before dopant implantation into source/drain regions. This preliminary action creates an amorphous layer in the gate that acts as a barrier, preventing dopant atoms from diffusing into the channel region during subsequent processing. This pre-established barrier ensures precise dopant placement and reduces threshold voltage variation in miniaturized transistors.

The patent applies selective amorphization to different regions: the gate electrode receives pre-amorphization implantation to create a dopant barrier, while source/drain regions receive selective amorphization for controlled doping. This local quality differentiation ensures that the gate structure prevents dopant diffusion into the channel, thereby reducing gate-induced drain leakage current in scaled transistors.

The patent performs pre-amorphization implantation of the gate electrode before dopant implantation, creating an amorphous barrier layer that pre-empts dopant diffusion into the channel. This preliminary protective action prevents the formation of conditions that would lead to gate-induced drain leakage, addressing the harmful effect before it can occur during subsequent processing steps.