Germanium Oxide Semiconductor Doping for High Carrier Density

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Solution Overview

Problem

Current methods for creating germanium oxide semiconductors with high carrier density and suitable electrical characteristics are limited, particularly in achieving carrier densities of 1.0×10^18/cm^3 or more, which is essential for advanced semiconductor devices.

Innovation Solution

A method involving the mist CVD technique is used to dope germanium oxide, where a raw material solution with a higher content of germanium than dopant elements is atomized, carried by a carrier gas, and thermally reacted on a base to form an oxide semiconductor with a carrier density of 1.0×10^18/cm^3 or more, utilizing antimony as a dopant to enhance conductivity and reduce resistivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If conventional methods are used to create germanium oxide semiconductor, then the manufacturing process is simpler, but the carrier density remains below 1.0×10^18/cm^3

Engineering Contradiction:

Improvecarrier densityVSAvoidmanufacturing complexity

Core Design Contradiction:

Quantity of substanceVSEase of manufacture

Solution Approach 1:

The patent changes the chemical composition parameters by incorporating antimony dopant at specific concentrations (0.01-5 atomic%) and controlling oxygen content to achieve carrier density ≥1.0×10^18/cm^3. This compositional parameter change enables high carrier density while maintaining manufacturing feasibility through established CVD processes.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite oxide semiconductor material combining germanium oxide with antimony dopant and controlled oxygen content. This composite structure achieves superior electrical characteristics (high carrier density and mobility) that cannot be obtained with pure germanium oxide alone, resolving the contradiction between performance and manufacturing complexity.

Inventive Principle:

Principle #40Composite materials

2Reliability

If germanium oxide is used as semiconductor material, then wide band gap properties are achieved, but carrier density and electrical conductivity are insufficient

Engineering Contradiction:

Improveelectrical characteristicsVSAvoidcarrier density

Core Design Contradiction:

ReliabilityVSQuantity of substance

Solution Approach 1:

The patent modifies the electrical parameters of germanium oxide by controlling dopant concentration (antimony at 0.01-5 atomic%) and oxygen content (5-50 atomic%). These parameter changes simultaneously improve carrier density and maintain the wide band gap property, achieving reliable electrical characteristics for power device applications.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent introduces localized dopant regions with antimony atoms substituted at specific lattice positions in the germanium oxide structure. This local quality change creates high carrier density regions while preserving the overall wide band gap material properties, enabling both high reliability and sufficient conductivity.

Inventive Principle:

Principle #3Local quality

3Quantity of substance

If higher carrier density is achieved through doping, then electrical conductivity improves, but manufacturing precision requirements increase

Engineering Contradiction:

Improvecarrier densityVSAvoiddopant concentration control

Core Design Contradiction:

Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent establishes a dopant concentration range (0.01-5 atomic% antimony) that provides sufficient manufacturing tolerance. Within this range, carrier density ≥1.0×10^18/cm^3 is achieved while maintaining reasonable manufacturing precision requirements, allowing standard CVD processes to produce consistent results without excessive control complexity.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The approach results in an oxide semiconductor with superior electrical characteristics, including high carrier density and low resistivity, suitable for advanced semiconductor devices such as power conversion and control systems, offering improved breakdown voltage resistance and performance.

Implementation Method 1

atomizing or forming droplets of a raw material solution containing a dopant element and germanium

Methodology Applied

Scientific EffectAtomization:

Implementation Method 2

simultaneously causing the atomized droplets to thermally react on the base

Methodology Applied

Scientific EffectThermal reaction:

Implementation Method 3

utilizing antimony as a dopant to enhance conductivity and reduce resistivity

Methodology Applied

Scientific EffectDoping: Dopants

Data Source

PatentUS20240250179A1Oxide semiconductor, semiconductor device and method of manufacturing an oxide semiconductor

Publication Date: 2024.07.25 FLOSFIA

AI summary

Provided is an oxide semiconductor including an oxide of germanium, the oxide semiconductor having a carrier density of 1.0×1018/cm3 or more. Provided is method of manufacturing an oxide semiconductor including an oxide of germanium doped on a base, the method including: atomizing or forming droplets of a raw material solution containing a dopant element and germanium, a content of the germanium being greater than a content of the dopant element; supplying a carrier gas to the atomized droplets obtained; and carrying the atomized droplets onto the base by the carrier gas, and simultaneously causing the atomized droplets to thermally react on the base.