Germanium Oxide Multilayers With Rutile Orientation and Smooth Surfaces
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Solution Overview
Problem
Current methods for fabricating germanium oxide crystals and multilayer structures face challenges in achieving superior orientation and surface smoothness, which are crucial for their application in semiconductor devices.
Innovation Solution
The development of a mist CVD method to form germanium oxide crystals with a rutile-type structure, oriented perpendicular or parallel to the c-axis, and a crystalline multilayer structure on a tetragonal substrate, with an atomic ratio of germanium greater than 0.5, ensuring excellent crystallinity and surface roughness of 10 nm or less.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to fabricate germanium oxide crystals, then the fabrication process is simpler, but the orientation and surface smoothness are insufficient
Solution Approach 1:
The patent applies parameter changes by precisely controlling the atomic ratio of germanium in the metal element (greater than 0.5) and orienting the oxide crystal to a crystallographic axis direction perpendicular to or parallel to the c-axis. These parameter specifications directly improve the orientation and surface smoothness of the germanium oxide crystal, resolving the contradiction between manufacturing precision and process complexity.
Solution Approach 2:
The patent uses composite materials by creating a crystalline oxide film containing germanium oxide with specific compositional ratios and crystallographic orientation on a tetragonal crystal substrate. This composite structure achieves superior orientation and surface smoothness (RMS of 10 nm or less) that cannot be obtained by conventional single-material deposition methods.
2Reliability
If the atomic ratio of germanium is increased to improve electrical characteristics, then band gap and carrier density improve, but the manufacturing complexity increases
Solution Approach 1:
The patent specifies that the atomic ratio of germanium in the metal element should be greater than 0.5, which directly improves electrical characteristics including band gap and carrier density. This parameter control enables high-quality germanium oxide films while maintaining manageable manufacturing complexity through precise compositional specification.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in high-quality germanium oxide films with improved electrical characteristics, such as higher band gaps and carrier densities, enhancing the performance of semiconductor devices like Schottky barrier diodes and metal-oxide-semiconductor field-effect transistors.
Implementation Method 1
atomizing or forming droplets of a raw material solution containing germanium; supplying a carrier gas to the atomized droplets obtained; and carrying the atomized droplets onto a crystal substrate having a tetragonal crystal structure by the carrier gas
Implementation Method 2
carrying the atomized droplets onto a crystal substrate having a tetragonal crystal structure by the carrier gas, and simultaneously causing the atomized droplets to thermally react on the crystal substrate
Implementation Method 3
an oxide crystal including an oxide having a rutile-type structure, the oxide crystal being oriented to a crystallographic axis direction perpendicular to or parallel to a c-axis
Implementation Method 4
a crystalline oxide film containing an oxide of germanium, the crystalline oxide film having a film thickness of 100 nm or more and a surface roughness (RMS) or 10 nm or less
Data Source
AI summary
An oxide crystal includes an oxide having a rutile-type structure. The oxide crystal is oriented to a crystallographic axis direction perpendicular to or parallel to a c-axis, and an atomic ratio of germanium in a metal element in the oxide crystal is greater than 0.5. A crystalline oxide film contains an oxide of germanium. A crystalline multilayer structure includes a crystal substrate, and a crystalline oxide film layered on the crystal substrate. The crystal substrate has a tetragonal crystal structure, and an atomic ratio of germanium in a metal element in the crystalline oxide film is greater than 0.5. A manufacturing method includes atomizing or forming droplets of a raw material solution containing germanium, supplying a carrier gas to the atomized droplets, and carrying the atomized droplets onto a crystal substrate having a tetragonal crystal structure and simultaneously causing the atomized droplets to thermally react on the crystal substrate.