Germanium Seed Layer Surface Functionalization for Uniform Ge Films
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Solution Overview
Problem
Existing methods for depositing germanium films on dielectric substrates using germane and digermane result in island formation due to reactivity mismatch, leading to high surface roughness and poor thickness control.
Innovation Solution
Utilizing organoamino-vinylsilane and organoamino-allylsilane precursors to functionalize the substrate surface with vinyl or allyl groups, followed by a hydrogermylation reaction with germanium precursors containing Ge—H bonds to form a smooth germanium seed layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If germane and digermane are used to deposit germanium films on dielectric substrates, then germanium films can be formed, but island formation occurs due to reactivity mismatch between germanium precursors and substrate surface hydroxy groups
Solution Approach 1:
The patent applies preliminary action by first functionalizing the dielectric substrate surface with vinyl or allyl groups through organosilane treatment before introducing germanium precursors. This pre-modification of the substrate surface creates appropriate reactive sites that match the germanium precursor reactivity, preventing island formation and enabling uniform film deposition.
Solution Approach 2:
The patent uses organosilane compounds with vinyl or allyl groups as intermediaries between the dielectric substrate and germanium precursors. These intermediary layers provide surface functionality that mediates the interaction between the substrate and germanium precursors, resolving the reactivity mismatch that causes island formation.
2Shape
If a seed layer is deposited to overcome island growth, then smooth starting surface is achieved, but thickness control and conformality are compromised
Solution Approach 1:
The patent enables self-service by creating a substrate surface that is inherently suitable for uniform germanium precursor deposition through vinyl/allyl functionalization. The modified surface automatically provides the necessary reactivity and uniformity for smooth film growth without requiring separate seed layer deposition processes, thereby maintaining thickness control and conformality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the growth of uniform and high-quality germanium films without island formation, improving conformality and thickness control.
Implementation Method 1
deposit a silicon-containing film such as, without limitation, silicon oxide, silicon oxynitride, silicon oxycarbonitride, or carbon-doped silicon oxide via a thermal atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) process
Implementation Method 2
resulting film is terminated with vinyl functional groups and suitable for forming a germanium seed layer
Implementation Method 3
hydrogermylation reaction with germanium precursors containing Ge—H bonds to form a smooth germanium seed layer
Implementation Method 4
subsequent growth of either an n-doped or p-doped germanium epitaxial film using GeH4 precursor in the presence of either phosphine or diborane, respectively
Data Source
AI summary
Precursors and methods for (a) forming silicon-containing films and (b) functionalizing substrate surfaces in order to generate a germanium seed layer suitable for deposition of Ge films. In one aspect, there is provided a precursor of Formula I and/or a precursor of Formula II:as described herein.