Germanium Tin Oxide p-Type Transistors for Low-Temperature BEOL

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Solution Overview

Problem

The semiconductor industry lacks a suitable p-type oxide semiconductor material for back-end-of-line (BEOL) integration that can be processed at low temperatures without damaging previously fabricated front-end-of-line (FEOL) and middle end-of-line (MEOL) devices.

Innovation Solution

Development of an oxide compound semiconductor material comprising germanium and tin, which can be used as a p-type semiconductor in BEOL structures, integrated with n-type oxide semiconductor materials to form complementary semiconductor devices, providing high charge carrier mobility and adjustable energy gap.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional semiconductor materials and processes are used for BEOL integration, then high performance transistors can be formed, but previously fabricated FEOL and MEOL devices are damaged due to high processing temperatures

Engineering Contradiction:

Improvedevice performanceVSAvoidthermal damage to FEOL and MEOL devices

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent changes the temperature parameter of the semiconductor fabrication process by using oxide semiconductor materials that can be processed at low temperatures (below 400°C), thereby preventing thermal damage to previously fabricated devices while maintaining transistor performance

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structures including oxide semiconductor active layers combined with metal gate electrodes and dielectric layers, enabling low-temperature processing that protects underlying FEOL and MEOL devices from thermal damage

Inventive Principle:

Principle #40Composite materials

2Object-affected harmful factors

If oxide semiconductor materials are used for BEOL integration, then low temperature processing is achieved that protects FEOL and MEOL devices, but suitable p-type oxide semiconductor material with high charge carrier mobility is lacking

Engineering Contradiction:

Improvethermal damage to FEOL and MEOL devicesVSAvoidcharge carrier mobility

Core Design Contradiction:

Object-affected harmful factorsVSReliability

Solution Approach 1:

The patent modifies the material composition parameters by incorporating germanium and tin elements into the oxide semiconductor structure, achieving both low-temperature processability and high charge carrier mobility in the resulting germanium tin oxide material

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent creates composite oxide semiconductor materials combining multiple elements (germanium, tin, and oxygen) to achieve unique properties including high charge carrier mobility and low processing temperature requirements, resolving the limitation of conventional oxide semiconductors

Inventive Principle:

Principle #40Composite materials

Data Source

PatentUS20250318228A1Germanium tin oxide-containing semiconductor device and methods for forming the same

Publication Date: 2025.10.09 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A field effect transistor may include an active layer containing an oxide compound material of at least two atomic elements including a first element of tin and a second element selected from Ge, Si, P, S, F, Ti, Cs, and Na and located over a substrate. The field effect transistor may further include a gate dielectric located on the active layer, a gate electrode located on the gate dielectric, and a source electrode and a drain electrode contacting a respective portion of the active layer. The oxide compound material may include at least germanium and tin. The oxide compound semiconductor material may be used as a p-type semiconductor material in BEOL structures.