Getter Structure With Variable Thickness Zones For Vacuum Encapsulation

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Solution Overview

Problem

Current getter structures for encapsulating microsystems like MEMS and NEMS face challenges in achieving and maintaining a controlled vacuum environment due to difficulties in thermal activation temperature alignment with sealing processes, leading to inefficient gas pumping and increased production costs.

Innovation Solution

A getter structure comprising adjacent parts of different thicknesses and surface grain densities, allowing for adjustable thermal activation temperature and pumping capacity, produced in a single deposition step, enabling modulation of thermal activation during the sealing cycle and subsequent gas pumping.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a getter material with high pumping capacity is used, then the vacuum level in the cavity is improved, but the thermal activation temperature may not align with the sealing process temperature

Engineering Contradiction:
Improvevacuum levelVSAvoidthermal activation temperature alignment
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The getter structure is divided into multiple zones with different thicknesses (first zone with thickness h1, second zone with thickness h2 where h1 > h2). Each zone has different surface grain density and thus different thermal activation characteristics. This local variation in structure allows the getter to operate effectively across a range of temperatures, aligning with the sealing process while maintaining high pumping capacity.

Inventive Principle:
Principle #3Local quality

2Productivity

If the getter material is thermally activated before sealing is complete, then gas pumping occurs during sealing, but the pumping capabilities are reduced after sealing

Engineering Contradiction:
Improvegas pumping during sealingVSAvoidpumping capabilities after sealing
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The getter structure utilizes gradual thickness variation from the first zone (h1) to the second zone (h2) to create a gradient in thermal activation behavior. This parameter change allows different portions of the getter to activate at different temperatures during the sealing process, enabling controlled gas pumping during sealing while preserving sufficient pumping capacity for post-sealing operation.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If additional heat treatment is performed after sealing to activate the getter, then the thermal activation temperature mismatch is resolved, but production time and cost increase

Engineering Contradiction:
Improvegetter activationVSAvoidproduction time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The getter structure is designed so that the sealing process itself provides the thermal activation energy needed. The multi-zone thickness configuration ensures that the getter activates during the sealing temperature range, merging the sealing operation with the getter activation process. This eliminates the need for separate post-sealing heat treatment steps, reducing production time and cost.

Inventive Principle:
Principle #5Merging (Combining)

4Adaptability or versatility

If multilayer deposits or particular metal alloys are used to achieve specific thermal activation temperatures, then the thermal activation temperature range is covered, but production cost increases

Engineering Contradiction:
Improvethermal activation temperature rangeVSAvoidproduction cost
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

Instead of using different materials or multilayer structures, the invention achieves different thermal activation characteristics by varying the local thickness of a single getter material layer. The first zone has greater thickness (h1) and the second zone has lesser thickness (h2), creating local structural quality differences that result in different surface grain densities and thermal activation temperatures, thereby reducing material costs while maintaining versatility.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces production costs and allows for flexible vacuum level management within encapsulation, enabling efficient gas absorption and adsorption across a range of thermal activation temperatures, from 250°C to 450°C, during and after encapsulation.

Implementation Method 1

materials are used, called getter materials, which trap the gas molecules contaminating the gaseous environment in the cavity (for example of the H2O, CO2, N2, O2, H2, etc.) by chemical reaction with them

Methodology Applied
Scientific EffectAbsorption: Absorption (physical)

Implementation Method 2

Such a getter material therefore makes it possible to carry out gaseous pumping by absorption and/or adsorption of these gaseous molecules

Methodology Applied
Scientific EffectAdsorption: Adsorption

Implementation Method 3

During this treatment, the chemical species trapped on the surface (in particular of the C, N and O type) are dissolved by diffusion in the material to expose the metal surface which is then able to adsorb other gaseous molecules

Methodology Applied
Scientific EffectDiffusion: Diffusion

Implementation Method 4

A getter material carries out a gaseous pumping after having undergone a heat treatment (the getter material is heated to a certain temperature) called thermal activation

Methodology Applied
Scientific EffectThermal activation: Heating

Data Source

PatentEP2546187B1Getter structure with optimised pumping capacity
Publication Date: 2017.08.09 COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
  • EP2546187B1 patent drawingFigure 1A~1B
  • EP2546187B1 patent drawingFigure 2A~2B
  • EP2546187B1 patent drawingFigure 3A~3B

AI summary

The structure has a getter portion (103) including two adjacent getter material parts (104, 106) that are arranged one beside the other on a support (102), and a substrate including a semiconductor such as silicon. The material parts exhibit different thicknesses and include cylindrical grains and surface grain densities, which are different from one another. The getter portion comprises a getter material layer consisting of titanium or zirconium. The material layer covers other material layers of the structure, and is protected by a protective layer. An independent claim is also included for a method for producing a getter structure.