GIA Gate Driving Circuit for Bias-Stress Stability
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Solution Overview
Problem
Existing micro LED display apparatuses face challenges in stably driving gate drivers within the gate in active (GIA) circuit due to issues such as bias stress and threshold voltage changes in transistors, which affect the reliability and efficiency of the gate driving mechanism.
Innovation Solution
The implementation of a gate in active (GIA) circuit with specific transistor configurations, including capacitors and transistors with adjusted pulse widths and channel lengths, along with optimized scan signal timings, to stabilize the gate driver operation and reduce bias stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a gate driver is embedded in the display panel using GIA circuit, then the display apparatus can achieve thinner profile and integrated structure, but the transistor experiences bias stress and threshold voltage changes leading to unstable operation
Solution Approach 1:
The gate driver circuit is divided into multiple stages (first gate driver stage, second gate driver stage, third gate driver stage) with each stage handling specific functions. This segmentation allows independent optimization of each stage to mitigate bias stress effects while maintaining overall compact integration in the display panel.
Solution Approach 2:
The patent employs parameter changes by adjusting transistor channel lengths (first channel length for first transistor, second channel length for second transistor, third channel length for third transistor where third > first and third > second) and configuring capacitor connections to alter electrical characteristics. These parameter modifications compensate for bias stress-induced threshold voltage shifts, ensuring stable gate driver operation within the thin display panel structure.
2Productivity
If transistor channel lengths are reduced to increase pixel density, then more pixels can be accommodated in the display panel, but bias stress effects on transistors are intensified
Solution Approach 1:
Different transistor regions are assigned different channel lengths tailored to their specific functional requirements and stress conditions. The first transistor has a first channel length, the second transistor has a second channel length, and the third transistor has a third channel length that is longer than both. This local differentiation allows each transistor to operate optimally under its specific bias conditions while maintaining high overall pixel density.
Solution Approach 2:
Capacitors are pre-configured in the circuit to store and supply charge, anticipating and compensating for bias stress effects before they significantly degrade transistor performance. The capacitor is connected to specific nodes to maintain voltage levels and counteract threshold voltage shifts proactively, enabling sustained high pixel density operation.
Data Source
AI summary
The present disclosure relates to a micro LED display apparatus, and to a display apparatus capable of stably driving a gate driver within a gate in active (GIA) circuit. According to the present disclosure, it is possible to stably drive a gate driver within the GIA circuit of a display apparatus.