Low-Compaction Glass Carrier Substrate for Pattern Stability

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Solution Overview

Problem

The reuse of carrier substrates in electronic device manufacturing under high temperature conditions leads to pattern shifting and reduced manufacturing yield due to heat shrinkage, particularly when the carrier substrate is reused multiple times.

Innovation Solution

A carrier substrate comprising a glass substrate with a compaction of 80 ppm or less, preferably 70 ppm or less, and a strain point of 700° C. or more, along with an adhesive layer, is used to minimize heat shrinkage and ensure high manufacturing yield.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a carrier substrate is reused multiple times under high temperature conditions, then productivity is improved through reuse, but manufacturing precision deteriorates due to pattern shifting from heat shrinkage

Engineering Contradiction:
Improvecarrier substrate reuse cyclesVSAvoidpattern positioning accuracy
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies parameter changes by selecting glass substrates with specific physical properties (compaction ≤80 ppm, strain point ≥700°C) to maintain dimensional stability under repeated high temperature processing. This changes the material parameters to resolve the contradiction between reuse and precision

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent directly addresses thermal expansion effects by using glass substrates with low compaction values that minimize heat-induced shrinkage. The low thermal shrinkage characteristic allows the carrier substrate to maintain its dimensions during high temperature processing cycles, preventing pattern shifting

Inventive Principle:
Principle #37Thermal expansion

2Manufacturing precision

If the compaction of the glass substrate is reduced to minimize heat shrinkage, then manufacturing precision is improved, but device complexity increases due to stricter material specifications

Engineering Contradiction:
Improvepattern positioning accuracyVSAvoidmaterial specification complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent establishes specific parameter ranges (compaction ≤80 ppm, strain point ≥700°C) that balance manufacturing precision requirements with material availability. These defined parameters provide clear selection criteria without excessive complexity

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed carrier substrate design maintains excellent manufacturing yield even after multiple reuse cycles by controlling heat-induced shrinkage, thereby reducing pattern deviation and improving the overall production efficiency.

Implementation Method 1

a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes

Methodology Applied
Scientific EffectThermal shrinkage: Thermal Contraction

Data Source

PatentUS12581730B2Carrier substrate, laminate, and method for manufacturing electronic device
Publication Date: 2026.03.17 AGC INC
  • US12581730B2 patent drawing
  • US12581730B2 patent drawing
  • US12581730B2 patent drawing

AI summary

A carrier substrate to be used, when manufacturing a member for an electronic device on a surface of a substrate, by being bonded to the substrate, includes at least a first glass substrate. The first glass substrate has a compaction described below of 80 ppm or less. Compaction is a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour.