Strengthened Glass Core Substrates for Fine-Pitch IC Die Coupling
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Solution Overview
Problem
Conventional approaches for coupling multiple integrated circuit (IC) dies at fine pitches face challenges due to substrate warpage and stress from thermal expansion, limiting interconnect density and reliability.
Innovation Solution
Incorporating a strengthened glass core with through-glass vias (TGVs) and metallization regions, which provides dimensional stability and reduces signal losses, and using ion-exchange or ion-implantation processes to enhance the glass core's strength and mitigate thermal stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional substrates are used for coupling IC dies at fine pitches, then manufacturing simplicity is maintained, but substrate warpage and thermal expansion stress increase, limiting interconnect density and reliability
Solution Approach 1:
The patent employs a composite substrate structure consisting of a glass core reinforced with ion-exchanged or ion-implanted surface layers. This composite construction combines the dimensional stability of glass with the enhanced mechanical strength from the modified surface regions, effectively reducing warpage and thermal expansion stress while maintaining coupling reliability at fine pitches
Solution Approach 2:
The patent modifies the physical and chemical parameters of the glass core through ion-exchange and ion-implantation processes. These parameter changes increase the glass core's strength and reduce its thermal expansion coefficient, thereby improving dimensional stability and reducing warpage without compromising the substrate's ability to support high-density interconnects
2Reliability
If through-glass vias are used to increase interconnect density, then coupling reliability improves, but manufacturing complexity increases due to the need for ion-exchange or ion-implantation processes
Solution Approach 1:
The patent performs ion-exchange or ion-implantation processes on the glass core before forming the through-glass vias. This preliminary action pre-strengthens the glass and creates a more robust substrate that can better withstand the subsequent via formation processes, reducing manufacturing complexity and improving overall coupling reliability
Solution Approach 2:
The patent applies ion-exchange or ion-implantation specifically to regions of the glass core where through-glass vias will be formed or where high mechanical strength is required. This localized treatment enhances the substrate's ability to support high-density interconnects without unnecessarily complicating the entire substrate structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables reliable coupling of IC dies with higher TGV density, lower signal losses, and reduced warpage, improving the stability and performance of microelectronic assemblies by minimizing thermal expansion-related stress.
Implementation Method 1
using ion-exchange or ion-implantation processes to enhance the glass core's strength and mitigate thermal stress
Implementation Method 2
using ion-exchange or ion-implantation processes to enhance the glass core's strength and mitigate thermal stress
Implementation Method 3
provides dimensional stability and reduces signal losses, and using ion-exchange or ion-implantation processes to enhance the glass core's strength and mitigate thermal stress
Data Source
AI summary
Disclosed herein are microelectronic assemblies including strengthened glass cores, as well as related devices and methods. In some embodiments, a microelectronic assembly may include a core made of glass and having a surface, the core further including a first region having a first concentration of ions and a second region having a second concentration of ions at the surface of the core; and a third region having a third concentration of ions, wherein the second region is between the third region and the surface of the core, and wherein the third concentration of ions is less than the first and second concentrations of ions; a dielectric with a conductive pathway at the surface of the core; and a die electrically coupled to the conductive pathway in the dielectric at the surface of the core by an interconnect.