Strengthened Glass Core Substrates for Low-Warpage IC Packaging
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Solution Overview
Problem
Conventional IC packaging approaches face challenges in achieving reliable die coupling due to substrate warpage and thermal expansion mismatch, limiting interconnect density and signal integrity.
Innovation Solution
Incorporating a strengthened glass core with through-glass vias and ion-exchange or ion-implantation processes to enhance structural stability and reduce signal losses, while using dielectric materials with conductive pathways for flexible routing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional substrate materials are used for IC packaging, then ease of manufacture is maintained, but substrate warpage and thermal expansion mismatch occur, reducing reliability and interconnect density
Solution Approach 1:
The patent employs a composite substrate structure consisting of a glass core layer combined with metal layers (such as copper or aluminum) and dielectric materials. This composite construction provides enhanced dimensional stability, reduced thermal expansion mismatch, and improved warpage control compared to conventional single-material substrates, thereby resolving the contradiction between reliability and structural complexity.
Solution Approach 2:
The patent modifies substrate parameters by controlling the thickness, material composition, and thermal properties of each layer in the composite structure. By adjusting these parameters, the substrate achieves optimized thermal expansion characteristics and mechanical stability, resolving the contradiction between reliability improvement and device complexity.
2Productivity
If through-glass vias are implemented for high-density interconnect, then interconnect density improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent implements preliminary via hole formation and alignment marking before final interconnect fabrication. Through-glass vias are pre-drilled and positioned with alignment features during the glass substrate preparation stage, allowing subsequent metal layer deposition and interconnect formation to proceed with reduced precision requirements. This preliminary action resolves the contradiction between achieving high interconnect density and maintaining manufacturing precision.
3Reliability
If ion-exchange or ion-implantation processes are used to strengthen glass core, then structural stability and signal integrity improve, but manufacturing complexity increases
Solution Approach 1:
The patent combines ion-exchange or ion-implantation strengthening processes with the existing glass substrate fabrication workflow. The ion treatment is integrated into the glass processing sequence, allowing the glass core to be strengthened during or immediately after substrate formation, rather than as a separate post-processing step. This merging of processes improves signal integrity while minimizing the increase in manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a stable and high-density interconnect architecture that minimizes warpage and thermal stress, improving the reliability and performance of IC packages by enabling precise die coupling and reduced signal losses.
Implementation Method 1
ion-exchange or ion-implantation processes to enhance structural stability
Implementation Method 2
ion-exchange or ion-implantation processes to enhance structural stability
Implementation Method 3
thermal expansion mismatch, limiting interconnect density and signal integrity
Data Source
AI summary
Disclosed herein are microelectronic assemblies including strengthened glass cores, as well as related devices and methods. In some embodiments, a microelectronic assembly may include a glass core having a surface, a first region having a first concentration of ions extending from the surface of the core to a first depth; a second region having a second concentration of ions greater than the first concentration of ions, the second region between the first region and the surface of the core; a dielectric with a conductive pathway at the surface of the glass core; and a die electrically coupled to the conductive pathway in the dielectric at the surface of the core by an interconnect.