Glass-Core PCB Substrate Structure for Package Warpage Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing integrated circuit (IC) packaging technologies face challenges with warpage due to the addition of multiple IC dies, leading to larger package sizes and reduced reliability, particularly in chiplet systems where organic bridges have wider pitches and silicon bridges are expensive and have longer process flows.
Innovation Solution
Incorporating a stiffening layer made of ceramic or glass in the substrate to reduce warpage, utilizing through-layer vias and conductive traces to provide electrical continuity and thermal management, with multilayer structures designed to counteract thermal expansion coefficients.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple IC dies are integrated into a single package, then system integration efficiency is improved, but package area form factor increases leading to warpage susceptibility
Solution Approach 1:
The patent employs a composite substrate structure combining organic material layers with embedded stiffening layers (ceramic or glass). This composite construction provides the necessary mechanical rigidity to prevent warpage while accommodating multiple IC dies, thus resolving the contradiction between integration efficiency and warpage resistance.
Solution Approach 2:
The substrate is segmented into multiple functional layers including organic material layers, stiffening layers, and redistribution layers. This segmentation allows each layer to perform its specific function - the organic layers provide flexibility and electrical connectivity while the stiffening layers provide mechanical support, collectively preventing warpage in large integrated packages.
2Ease of manufacture
If organic bridges are used for IC interconnection, then manufacturing ease is improved, but pitch width increases reducing IC density
Solution Approach 1:
The patent changes the physical parameters of the bridge structure by using thin-film deposition techniques to create metal traces on the substrate surface. This allows for significantly reduced pitch widths compared to traditional organic bridges, while the traces can still be manufactured using standard semiconductor fabrication processes, maintaining ease of manufacture.
3Reliability
If silicon bridges are used for IC interconnection, then electrical performance is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent introduces an intermediary substrate structure with embedded redistribution layers that mediates between the IC dies. This substrate with its conductive traces and vias provides the necessary electrical connectivity without requiring complex silicon bridge structures, thus maintaining electrical performance while simplifying the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The stiffening layers effectively reduce warpage and improve coplanarity, enabling smaller package sizes and higher IC density while maintaining electrical integrity and thermal insulation.
Implementation Method 1
multilayer structures designed to counteract thermal expansion coefficients
Implementation Method 2
utilizing through-layer vias and conductive traces to provide electrical continuity
Implementation Method 3
maintaining electrical integrity and thermal insulation
Data Source
AI summary
An electronic device comprises a first redistribution layer (RDL) including multiple sublayers of conductive traces formed in an organic material; a stiffening layer including one of a ceramic or glass, the stiffening layer including a first surface contacting a first surface of the first RDL and including a through layer via (TLV); and multiple integrated circuit (ICs) arranged on a second surface of the first RDL and including bonding pads, wherein the conductive traces of the first RDL provide electrical continuity between at least one bonding pad of the ICs and at least one TLV of the stiffening layer.


