Glass Core Via Metallization With Surface Passivation
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Solution Overview
Problem
Conventional metallization processes for glass cores in microelectronic assemblies result in wasteful deposition of conductive fill material on top and bottom surfaces, leading to increased costs due to the need for chemical mechanical planarization (CMP) and higher aspect ratios exacerbating these issues.
Innovation Solution
Implementing selective metallization that includes forming openings in glass cores, lining sidewalls with a seed material, depositing a passivation material on the top/bottom surfaces, and filling the openings with a conductive fill material, thereby reducing deposition on these surfaces and minimizing the need for CMP.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional metallization processes are used for glass cores, then conductive vias can be formed, but excessive conductive fill material is deposited on top and bottom surfaces leading to increased costs and CMP process requirements
Solution Approach 1:
The patent applies local quality by making the glass core surface selectively reactive or non-reactive to conductive fill material deposition. By modifying specific local areas (opening regions vs. top/bottom surfaces) to have different properties, the conductive fill material deposits only where needed in the openings while avoiding unwanted deposition on the top and bottom surfaces, thereby reducing material waste and eliminating CMP requirements.
2Manufacturing precision
If conventional metallization processes are used for glass cores, then conductive vias can be formed, but the CMP process becomes more extensive and costly
Solution Approach 1:
The patent makes the top and bottom surfaces of the glass core selectively non-reactive to conductive fill material through local property modification. This ensures that deposition occurs only within the openings where conductive vias are needed, eliminating the need for extensive CMP processes to remove excess material from surfaces, thereby reducing process time and costs.
3Length of moving object
If higher aspect ratios are used in conductive vias, then via depth can be increased, but deposition control becomes more difficult and material waste increases
Solution Approach 1:
The patent addresses higher aspect ratio challenges by making the glass core openings selectively reactive while making the top and bottom surfaces non-reactive. This local differentiation allows conductive fill material to be deposited controlledly within deep openings without excessive deposition on surfaces, improving deposition control and reducing material waste even at higher aspect ratios.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces material waste and costs by minimizing the amount of conductive fill material used and shortens the CMP process, leading to more cost-effective and efficient integration of conductive vias in glass cores.
Implementation Method 1
lining sidewalls of the opening with a seed material
Implementation Method 2
depositing a passivation material on the top/bottom surfaces
Data Source
AI summary
Selective metallization for fabricating conductive vias in glass cores, as well as related devices, are disclosed. In one aspect, a method for fabricating a conductive via in a glass core using selective metallization includes forming an opening in the glass core, the opening extending from a surface of the glass core (e.g., from the top surface) towards an opposite surface of the glass core (e.g., towards the bottom surface), lining sidewalls of the opening with a seed material, depositing a passivation material onto the surface of the glass core from which the opening lined with the seed material extends into the glass core, and subsequently filling the opening with a conductive fill material. The passivation material is a material that reduces or prevents deposition of the conductive fill material thereon.