2D 3D Glass Filter Multiplexer for Carrier Aggregation
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Solution Overview
Problem
Fabricating high-performance diplexers that efficiently reduce electromagnetic coupling between components while minimizing size and resource usage is challenging, particularly in achieving high Q-factors for inductors and capacitors in carrier aggregation systems.
Innovation Solution
A multiplexer structure integrating a 2D passive on glass filter with a 3D through glass via filter, featuring a high band filter with 2D planar spiral inductors and a low band filter with 3D through-substrate inductors and capacitors, coupled via through-substrate vias on a passive substrate, allowing for efficient signal processing and reduced electromagnetic interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional diplexer designs using inductors and capacitors are used, then high performance can be attained through high Q-factor components, but the device complexity and size increase
Solution Approach 1:
The patent transitions from traditional 2D planar diplexer layouts to a 3D vertical architecture using through-glass vias (TGVs) and stacked capacitor structures. This dimensional change allows components to be arranged vertically through the substrate rather than horizontally on the surface, reducing electromagnetic coupling between components while maintaining high Q-factors and reducing overall device footprint.
Solution Approach 2:
The patent implements nested capacitor structures where multiple capacitor plates are stacked vertically within the glass substrate, connected through TGVs. This nesting approach increases the effective capacitance value without increasing the horizontal footprint, allowing for compact high-performance diplexer designs that maintain electrical performance while reducing device complexity.
2Reliability
If electromagnetic coupling between components is reduced for high performance, then insertion loss and rejection improve, but the device size increases
Solution Approach 1:
By moving component arrangements into the third dimension through the glass substrate using TGVs, the patent reduces the horizontal spacing requirements between components. The vertical separation provided by the substrate thickness allows for reduced electromagnetic coupling in the horizontal plane, improving insertion loss and rejection while maintaining a compact overall device footprint.
Solution Approach 2:
The glass substrate acts as an intermediary layer that provides electrical isolation and mechanical support between the TGV-connected components. This intermediary structure enables close component spacing while maintaining low electromagnetic coupling, as the substrate material provides natural shielding and isolation between signal paths.
3Ease of manufacture
If multiple components are fabricated on a single substrate for integration, then resource usage decreases, but manufacturing precision requirements increase
Solution Approach 1:
The patent divides the diplexer circuit into distinct functional modules (inductor sections, capacitor stacks, TGV interconnects) that can be fabricated separately on the glass substrate and then integrated. This segmentation allows each component type to be optimized independently during fabrication while maintaining overall integration benefits, reducing the cumulative precision requirements compared to fabricating all components simultaneously.
Solution Approach 2:
The patent utilizes the glass substrate's inherent properties (thickness, material composition, electrical characteristics) as design parameters that can be adjusted to accommodate manufacturing tolerances. By optimizing substrate thickness and TGV dimensions, the design compensates for variations in component alignment and fabrication tolerances, enabling high-precision performance from standard manufacturing processes.
Data Source
AI summary
A multiplexer structure includes a passive substrate. The multiplexer structure may also include a high band filter on the passive substrate. The high band filter may include a 2D planar spiral inductor(s) on the passive substrate. The multiplexer structure may further include a low band filter on the passive substrate. The low band filter may include a 3D through-substrate inductor and a first capacitor(s) on the passive substrate. The multiplexer structure may also include a through substrate via(s) coupling the high band filter and the low band filter.


