Thick Metallization via Glass Substrate Electroplating
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Solution Overview
Problem
The manufacturing of thick metallization layers in semiconductor devices is hindered by low deposition rates and the need for additional patterning processes, which prolongs manufacturing times and complicates the process.
Innovation Solution
A method involving a glass substrate with openings and trenches is used, where the glass substrate is attached to a semiconductor wafer, allowing for metal layer formation on exposed walls and uncovered areas through electroplating, followed by grinding to remove trenches and separate semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional deposition techniques are used to form metallization layers, then the layers can be deposited with good adhesion, but the deposition rate is low which causes long manufacturing times
Solution Approach 1:
The patent replaces conventional physical vapor deposition techniques with electroplating to form metallization layers. This substitution enables significantly higher deposition rates while maintaining good adhesion through proper surface preparation and electroplating process control, directly resolving the contradiction between deposition rate and manufacturing time
Solution Approach 2:
The patent changes the deposition method from low-rate physical vapor deposition to high-rate electroplating. By adjusting electroplating parameters such as current density, electrolyte composition, and plating time, the process achieves rapid metal layer formation with thicknesses suitable for power semiconductor applications, thereby improving productivity without excessive loss of time
2Temperature
If thick metallization layers are manufactured using conventional techniques, then adequate thermal dissipation can be achieved, but additional patterning processes are required which complicates the manufacturing process
Solution Approach 1:
The patent performs preliminary structuring of the glass substrate before metal deposition by forming through-holes and filling them with metal to create raised metal pads. This preliminary action eliminates the need for subsequent complex patterning processes of thick metal layers, as the glass substrate structure itself defines the final metal geometry, thereby reducing manufacturing process complexity while maintaining adequate thermal dissipation
Solution Approach 2:
The patent segments the metallization structure into two parts: thin conformal metal layers formed by electroplating on the glass substrate walls, and thick metal regions formed by filling the through-holes. This segmentation allows each part to be optimized independently - the thin layers provide good adhesion and electrical connection, while the thick filled regions provide thermal dissipation, all without requiring complex subsequent patterning
3Temperature
If thick metallization layers are formed to dissipate heat effectively, then thermal management is improved, but the deposition process becomes time-consuming
Solution Approach 1:
The patent replaces slow physical vapor deposition with fast electroplating to form thick metallization layers. Electroplating achieves deposition rates orders of magnitude higher than conventional techniques, enabling formation of heat-dissipating metal layers with adequate thickness in practical manufacturing times, thus resolving the contradiction between heat dissipation capability and deposition time
Solution Approach 2:
The patent forms the glass substrate structure with through-holes and preliminary metal seeding before the final thick metal deposition. This preliminary action enables the subsequent electroplating process to rapidly build thick metal layers in the through-holes for thermal dissipation without requiring time-consuming conventional deposition, achieving both heat dissipation and reasonable deposition time
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of thick metal regions with improved electrical connections and thermal dissipation without the need for subsequent structuring, reducing manufacturing time and increasing deposition rates through controlled electroplating.
Implementation Method 1
providing a stack including a semiconductor wafer and a glass substrate attached to the semiconductor wafer
Implementation Method 2
forming a metal region by electroplating metal in the openings and the trench
Implementation Method 3
by subsequently grinding the glass substrate to remove the trenches
Implementation Method 4
cutting the stack including the semiconductor wafer and the attached glass substrate to separate the semiconductor devices
Implementation Method 5
forming at least one solder bump in the opening of the glass substrate on the uncovered area of the semiconductor device; and soldering the semiconductor device with the solder bump on a lead frame
Data Source
AI summary
A method for manufacturing semiconductor devices includes providing a stack having a semiconductor wafer and a glass substrate with openings and at least one trench attached to the semiconductor wafer. The semiconductor wafer includes a plurality of semiconductor devices. The openings of the glass substrate leave respective areas of the semiconductor devices uncovered by the glass substrate and the trench connects the openings. A metal layer is formed at least on exposed walls of the trench and the openings and on the uncovered areas of the semiconductor devices of the semiconductor wafer. A metal region is formed by electroplating metal in the openings and the trench and by subsequently grinding the glass substrate to remove the trenches. The stack of the semiconductor wafer and the attached glass substrate is cut to separate the semiconductor devices.