Semiconductor Glass Substrate Mark Layout Around Laser-Formed Holes
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Solution Overview
Problem
Glass substrates for semiconductors are prone to defects such as fractures or cracks when identification marks are formed inside, affecting their appearance and readability, particularly due to insufficient distance and depth ratios between the identification marks and holes.
Innovation Solution
The glass substrate design ensures a minimum distance of 100 μm between identification marks and holes, a depth ratio of 0.03-33 between the marks' depths from opposite surfaces, and a thickness ratio of 0.01-0.50 between the marks' thickness and the substrate's thickness, using laser processing to form holes and marks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an identification mark is formed inside the glass substrate, then the mark is protected from dirt accumulation and surface processing damage, but defects such as fractures or cracks occur during processing
Solution Approach 1:
The patent applies parameter changes by optimizing the depth of the identification mark within the glass substrate. By controlling the mark depth to be within 0.01-0.50 times the substrate thickness and positioning it at least 100 μm from holes, the processing parameters are adjusted to minimize stress concentration and prevent fractures while maintaining mark durability.
Solution Approach 2:
The patent employs preliminary action by pre-positioning the identification mark at optimal depth and location before final substrate processing. This advance positioning ensures that subsequent hole formation and surface treatments do not compromise the mark's integrity, preventing defects before they occur.
2Productivity
If the identification mark is placed close to holes, then processing efficiency is improved, but defects such as fractures or cracks increase
Solution Approach 1:
The patent changes the spatial parameter by establishing a minimum distance of 100 μm between the identification mark and holes. This parameter adjustment balances processing efficiency with substrate integrity, preventing stress-induced fractures while maintaining reasonable processing throughput.
3Measurement precision
If the identification mark depth is increased, then mark visibility and durability are improved, but processing complexity and defect risk increase
Solution Approach 1:
The patent optimizes the depth parameter by defining it as 0.01-0.50 times the substrate thickness. This normalized parameter range ensures sufficient mark readability while avoiding excessive depth that would increase processing complexity and defect risk, achieving a balanced solution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design significantly reduces defects during processing, enhancing the appearance and readability of the glass substrate and identification marks, ensuring high-quality production.
Implementation Method 1
using laser processing to form holes and marks
Data Source
AI summary
A glass substrate for semiconductors includes a first principal surface and a second principal surface disposed to face opposite the first principal surface, in which a wiring layer is to be formed on at least one of the first principal surface and the second principal surface. The glass substrate for semiconductors has a hole formed in at least one of the first principal surface and the second principal surface, and the glass substrate for semiconductors has an identification mark for identifying the glass substrate between the first principal surface and second principal surface. The minimum value of a shortest distance and a shortest distance is equal to or greater than 100 μm. A ratio (d1 ave/d2 ave) is 0.03-33. A ratio (d3 ave/d ave) is 0.01-0.50.