Glass Substrate Carrier for Semiconductor Wafer Thinning
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Solution Overview
Problem
The mechanical stability of thin semiconductor chips is compromised due to their brittle nature, and existing carrier systems fail to adequately support them during high-temperature processes and thick metallization formation, leading to deformation and handling issues.
Innovation Solution
A method involving the use of glass substrates with cavities or openings is employed to bond with semiconductor wafers, providing mechanical support and allowing for thinning and metallization without deforming the semiconductor material, and the glass substrates remain attached to form an irreversible carrier system, enhancing mechanical properties and reducing dicing difficulties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the thickness of semiconductor material is reduced to improve device characteristics, then device performance is improved, but mechanical stability deteriorates due to brittleness
Solution Approach 1:
A glass carrier substrate is introduced as an intermediary support structure that mechanically supports the thin semiconductor chip during manufacturing and handling. The carrier substrate provides the necessary mechanical strength while allowing the thin semiconductor layer to maintain its improved electrical characteristics.
Solution Approach 2:
The invention creates a composite structure combining the thin semiconductor chip with a glass carrier substrate. This composite structure leverages the electrical properties of the thin semiconductor layer while utilizing the mechanical strength of the glass carrier to prevent breakage.
2Strength
If reversible carrier systems are used to support thin semiconductor chips, then mechanical stability is improved during handling, but the bond connection fails at high temperatures
Solution Approach 1:
The invention changes the thermal parameter of the bond connection by using a glass-ceramic material that can withstand high temperatures. The glass-ceramic layer is specifically selected to maintain bond strength at temperatures exceeding 250°C, allowing the carrier system to remain reliable throughout the entire manufacturing process including metallization steps.
3Reliability
If irreversible carrier systems are used to withstand high temperatures, then temperature resistance is improved, but the carrier remains attached to the finished device
Solution Approach 1:
The glass-ceramic layer is applied locally only in the regions where mechanical support and thermal resistance are needed, rather than covering the entire device. This localized application allows the carrier to be selectively removed from non-critical areas while maintaining attachment in regions where it provides necessary support.
Solution Approach 2:
The carrier system transitions from a static permanent attachment to a dynamic system where the glass-ceramic layer can be selectively removed. The local removal capability allows the carrier to serve its protective function during manufacturing and then be partially eliminated in the final device, reducing complexity where unnecessary.
4Manufacturing precision
If thick metallisation regions are formed on thin semiconductor substrates, then electrical performance is improved, but the substrate deforms under the metallisation weight
Solution Approach 1:
The glass carrier substrate acts as a counterweight and support structure that compensates for the deformation caused by thick metallisation layers. The rigid glass carrier provides mechanical support that prevents the thin semiconductor substrate from warping or deforming under the weight of the metallisation, while the metallisation can still be formed to the required thickness for optimal electrical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the mechanical stability and handling of thin semiconductor wafers, prevents deformation during metallization, and allows for efficient dicing without cutting through thick metallization regions, resulting in improved device performance and manufacturing efficiency.
Implementation Method 1
A first glass substrate is bonded with its bonding surface to the first surface of the semiconductor wafer
Data Source
AI summary
A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallization region is formed on the machined second surface of the semiconductor wafer.