Glass Carrier Substrate Stress Profile for Equipment Compatibility

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Solution Overview

Problem

Glass-based carrier substrates face challenges in compatibility with existing semiconductor industry equipment, leading to potential breakage and pick-up failures due to differences in thermal expansion and flatness requirements compared to silicon substrates.

Innovation Solution

The development of glass-based articles with engineered stress distribution and flatness, featuring maximum optical retardation at the edge decreasing towards the center, and specific thermal expansion coefficients, allowing them to be used with existing equipment without breakage or de-bonding issues.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If glass-based carrier substrates are used instead of silicon substrates, then compatibility with existing equipment is improved, but breakage and pick-up failures occur due to differences in thermal expansion and flatness

Engineering Contradiction:
Improvecompatibility with existing equipmentVSAvoidbreakage and pick-up failures
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent applies parameter changes by controlling the coefficient of thermal expansion (CTE) of the glass-based substrate to match that of silicon wafers (approximately 2.6×10^-6 /°C to 3.6×10^-6 /°C over -55°C to 150°C). This parameter matching resolves the thermal expansion mismatch issue that causes breakage and pick-up failures, while maintaining compatibility with existing semiconductor manufacturing equipment designed for silicon substrates.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If glass-based substrates are processed with existing equipment, then equipment utilization is improved, but flatness control becomes difficult leading to processing issues

Engineering Contradiction:
Improveequipment utilizationVSAvoidflatness control
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent controls the flatness of the glass-based substrate to within specific tolerances (e.g., ±10 μm to ±30 μm over the substrate area) to match the requirements of existing semiconductor processing equipment. This flatness control enables the glass substrates to be processed using standard equipment without modification, maintaining high equipment utilization while achieving the necessary manufacturing precision for successful chip assembly and thinning operations.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The glass-based articles exhibit improved durability and shape stability, enabling safe handling and processing with existing semiconductor equipment, reducing breakage and pick-up failures.

Implementation Method 1

differences in thermal expansion and flatness requirements compared to silicon substrates

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Implementation Method 2

heating the glass-based substrate pressed between the two surfaces such that the entire glass-based substrate is above a first temperature, wherein the first temperature is above the annealing temperature of the glass-based substrate

Methodology Applied
Scientific EffectAnnealing: Annealing

Data Source

PatentUS12040183B2Glass-based article with engineered stress distribution and method of making same
Publication Date: 2024.07.16 CORNING INC
  • US12040183B2 patent drawing
  • US12040183B2 patent drawing
  • US12040183B2 patent drawing

AI summary

Disclosed herein are glass-based articles having a first surface having an edge, wherein a maximum optical retardation of the first surface is at the edge and the maximum optical retardation is less than or equal to about 40 nm and wherein the optical retardation decreases from the edge toward a central region of the first surface, the central region having a boundary defined by a distance from the edge toward a center point of the first surface, wherein the distance is ½ of the shortest distance from the edge to the center point.