Glass Via Etching Sequence for Higher Density and Less Undercut

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Solution Overview

Problem

Conventional single-sided wet etching processes for forming vias in glass substrates result in excessively tapered holes, limited via density, and significant undercutting, which complicates the formation of precise and uniform through-holes for electronic and photonic packaging applications.

Innovation Solution

A method involving a single-sided acidic wet etching process followed by a double-sided acidic wet etching process, using hydrogen fluoride etching compositions, to control the formation of vias, reducing undercutting and achieving a conical frustum shape with a waist within a specific thickness range, thereby improving via density and uniformity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a single-sided wet etching process is used to form vias in glass substrates, then the process is simple and fast, but the vias become excessively tapered with large top openings and significant undercutting

Engineering Contradiction:
Improveetching speedVSAvoidvia shape control
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The etching process is divided into two separate stages: a first etching process that creates an initial opening through the damage track, and a second etching process that enlarges the opening to the final diameter. This segmentation allows each process to be optimized independently - the first process creates a controlled initial opening while the second process achieves the final via shape with minimal tapering and undercutting.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A damage track is created in the glass substrate before etching using laser irradiation or ion beam treatment. This preliminary action creates a localized region of modified glass structure that guides the etching process and enables precise via formation. The damage track serves as a pre-formed pathway that controls where the via will form and limits lateral etching.

Inventive Principle:
Principle #10Preliminary action

2Device complexity

If a single-sided wet etching process is used, then the process complexity is low, but via density is limited due to large opening sizes

Engineering Contradiction:
Improveprocess complexityVSAvoidvia density
Core Design Contradiction:
Device complexityVSQuantity of substance

Solution Approach 1:

The two-stage etching process enables better control over via opening sizes. By separating the initial opening creation from the final enlargement step, the process can achieve smaller, more precise via openings that increase via density while maintaining manageable process complexity through systematic control of each stage.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The damage track created before etching serves as a precise template that limits lateral etching and controls via positioning. This preliminary structuring enables higher via density by ensuring that etching occurs only along the predetermined damage track pathway, preventing unwanted lateral expansion that would reduce via density.

Inventive Principle:
Principle #10Preliminary action

3Loss of time

If a single-sided wet etching process is used, then manufacturing time is reduced, but undercutting increases which complicates subsequent metallization

Engineering Contradiction:
Improvemanufacturing timeVSAvoidmetallization ease
Core Design Contradiction:
Loss of timeVSEase of manufacture

Solution Approach 1:

By dividing the etching into two controlled stages, the process minimizes undercutting in both stages compared to a single long etch. The first stage creates a controlled initial opening with limited undercutting, and the second stage completes the via with precise shape control. This reduces the need for additional undercutting removal steps, maintaining efficiency while improving metallization readiness.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The damage track created beforehand serves as a confinement structure that directs etching vertically through the glass rather than allowing lateral undercutting. This preliminary structural modification ensures that subsequent etching follows the damage track pathway, producing vias with minimal undercutting that are ready for direct metallization without additional cleaning or preparation steps.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method enhances control over via shape and size, reduces undercutting, and increases via density by making the top opening diameter less dependent on substrate thickness, facilitating easier metallization and reducing manufacturing time and costs.

Implementation Method 1

applying a single-sided acidic wet etching process to a first surface of the inorganic substrate

Methodology Applied
Scientific EffectWet etching:

Implementation Method 2

The single-sided acidic wet etching process may enlarge at least a maximum width of the first end of the damage track to form a first opening

Methodology Applied
Scientific EffectChemical dissolution:

Data Source

PatentUS20240071779A1Facilitating formation of a via in a substrate
Publication Date: 2024.02.29 MOSAIC MICROSYSTEMS LLC
  • US20240071779A1 patent drawing
  • US20240071779A1 patent drawing
  • US20240071779A1 patent drawing

AI summary

A method of facilitating formation of a via in an inorganic substrate may include applying a single-sided acidic wet etching process to a first surface of the inorganic substrate in a first state in which the inorganic substrate has a mask layer set covering a second surface of the inorganic substrate; and applying a double-sided acidic wet etching process to the first surface and the second surface of the inorganic substrate after completion of the single-sided acidic wet etching process and in a second state in which the inorganic substrate has had the mask layer set removed from the second surface of the inorganic substrate.