Through Glass Via Impedance Control in Semiconductor Devices
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Solution Overview
Problem
The use of glass substrates in semiconductor devices is hindered by transmission losses and difficulties in processing, particularly due to coefficient of thermal expansion mismatches and low etching rates, making it challenging to implement impedance control effectively.
Innovation Solution
A semiconductor device with electrode and ground wiring lines formed as through glass vias, filled with metal, arranged in a strip or microstrip line structure on a glass substrate, utilizing electric discharge machining or blasting for formation, allowing for impedance control by adjusting conductor diameter and insulating layer thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If glass substrate is used to reduce cost, then material cost is reduced, but transmission loss increases due to stacking multiple glass substrates
Solution Approach 1:
The invention transitions from planar wiring to three-dimensional through-glass-via wiring, enabling signal transmission through the thickness direction of the glass substrate. This vertical routing approach eliminates the need for stacking multiple glass substrates laterally, thereby reducing transmission loss while maintaining cost benefits of glass substrate usage.
Solution Approach 2:
The invention introduces through-glass-vias as intermediary structures that penetrate the glass substrate, providing direct electrical connection paths. These vias act as mediators between different wiring layers, enabling controlled impedance transmission without requiring multiple stacked glass substrates, thus reducing both cost and transmission loss.
2Ease of manufacture
If conventional processing methods are used on glass substrate, then manufacturing simplicity is maintained, but manufacturing precision deteriorates due to low etching rate
Solution Approach 1:
The invention replaces conventional mechanical etching methods with laser-based processing for forming through-glass-vias. This substitution overcomes the inherently low etching rate of glass substrates by using focused laser energy to precisely ablate the glass material, achieving high manufacturing precision while maintaining relative process simplicity.
Solution Approach 2:
The invention changes the processing parameters by using laser power, pulse duration, and scanning speed as controllable variables instead of mechanical etching parameters. This allows precise control of via dimensions and depth, achieving high manufacturing precision in glass substrates without complex mechanical processing systems.
3Manufacturing precision
If Deep RIE process is used to form microstrip line structure, then manufacturing precision is improved, but device complexity increases and glass substrate cannot be processed
Solution Approach 1:
The invention extracts the essential function of controlled impedance transmission from the complex Deep RIE microstrip line structure and implements it through simpler through-glass-via structures. By removing the need for complex lateral patterning and microstrip line formation, the solution achieves impedance control through vertical via arrangements, significantly reducing process complexity while maintaining precision.
Solution Approach 2:
Instead of forming microstrip lines laterally on the glass substrate surface, the invention inverts the approach by creating through-glass-via structures that extend vertically through the substrate. This inverted wiring architecture achieves controlled impedance transmission without requiring the complex Deep RIE processes needed for conventional microstrip line formation on glass.
4Ease of manufacture
If through glass via is formed by conventional methods, then processing simplicity is maintained, but manufacturing precision deteriorates
Solution Approach 1:
The invention replaces conventional mechanical drilling or laser drilling methods with focused ion beam (FIB) processing for forming through-glass-vias. This substitution provides superior dimensional precision and vertical sidewall profiles while maintaining relatively simple processing steps, achieving high manufacturing precision without significantly increasing process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient impedance control in semiconductor devices using glass substrates, reducing costs and processing complexities while maintaining high accuracy and low costs.
Implementation Method 1
The through glass via may be formed by electric discharge machining or blasting.
Implementation Method 2
The through glass via may be formed by electric discharge machining or blasting.
Data Source
AI summary
The present technology relates to a semiconductor device and a method of manufacturing the semiconductor device capable of realizing impedance control of the semiconductor device.An input/output wiring line 23 and a ground wiring line 22 are such that through glass vias are provided so as to form a strip line structure by blasting or electric discharge machining and thereafter metal films are formed on a surface and a rear surface. It is possible to configure the semiconductor device with the impedance control by adjusting a conductor diameter of the input/output wiring line 23 and an insulating layer thickness between the input/output wiring line 23 and the ground wiring line 22. The present technology may be applied to the semiconductor device.