GaN Device Integration via ELOG Regrowth
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Solution Overview
Problem
Current gallium nitride (GaN)-based electronic devices face limitations in designing integrated structures with various properties on a single substrate, particularly in epitaxial structure development and device process technology, which hinders the implementation of diverse FET devices.
Innovation Solution
The implementation of a nitride electronic device using regrowth technology with a semi-insulating GaN layer, where a low temperature buffer layer, semi-insulating nitride layers, channel layers, and barrier layers are sequentially stacked and etched to enable the integration of different types of devices on a single substrate, utilizing epitaxial lateral overgrowth (ELOG) to achieve device isolation and reduce leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If traditional epitaxial structure design is used for GaN-based devices, then device performance is maintained, but integration of various types of devices on a single substrate is limited
Solution Approach 1:
The substrate surface is segmented into multiple regions, each with different epitaxial structures suitable for different device types. The method divides the single substrate into first and second regions, where the first region contains a first epitaxial structure for one type of device and the second region contains a second epitaxial structure for another type of device, enabling integrated manufacturing of various GaN-based devices simultaneously
Solution Approach 2:
Different regions of the substrate are given different local epitaxial structures tailored to specific device requirements. The first region receives a first epitaxial structure with specific layer compositions and thicknesses optimized for certain devices, while the second region receives a second epitaxial structure optimized for different device types, allowing each region to have the optimal structure for its intended function
2Productivity
If horizontal device arrangement is used, then manufacturing process is simple, but device integration density is low
Solution Approach 1:
The patent transitions from horizontal device arrangement to vertical stacking architecture, where multiple device types are stacked in the vertical dimension on the same substrate footprint. This dimensional change enables higher integration density by utilizing the third dimension (depth) rather than only the horizontal plane, allowing multiple active regions to occupy overlapping horizontal spaces at different vertical levels
3Reliability
If device isolation is not implemented, then manufacturing process is simplified, but leakage current increases
Solution Approach 1:
An isolation layer is introduced as an intermediary element between adjacent devices and active regions. This isolation layer, positioned between the substrate and the active epitaxial structures, provides electrical isolation to prevent leakage current while maintaining the overall device structure. The isolation layer acts as a mediator that enables device isolation without requiring complex structural modifications to the active device regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the simultaneous manufacturing of various types of devices, including high-frequency and high-current devices, on a single substrate, improving device integration density and enabling surface planarization, thereby overcoming the limitations of traditional horizontal device arrangements.
Implementation Method 1
through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer
Data Source
AI summary
The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.