Glue Layer Enhances Copper Seed Step Coverage in Via Holes

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Solution Overview

Problem

The challenge in manufacturing semiconductor devices lies in achieving a uniform and continuous copper seed layer within high aspect ratio through via holes, where uneven sidewalls and different etching rates of dielectric layers lead to voids and poor step coverage, making it difficult to form reliable interlayer connecting structures.

Innovation Solution

A glue layer is introduced between the formation of a barrier layer and a copper seed layer, enhancing adhesion and preventing self-agglomeration, resulting in a uniform and continuous copper seed layer that fills through via holes without voids.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a copper seed layer is formed directly on the barrier layer in high aspect ratio through via holes, then the manufacturing process is simple, but the step coverage is poor and voids form due to uneven sidewalls and self-agglomeration

Engineering Contradiction:
Improvemanufacturing process simplicityVSAvoidstep coverage uniformity
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

A glue layer is introduced as an intermediary between the barrier layer and the copper seed layer. This glue layer serves as a mediator that improves adhesion and prevents copper self-agglomeration, enabling uniform step coverage in high aspect ratio through via holes without complicating the overall manufacturing process

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If metal rings are formed to block etching and improve sidewall uniformity, then the step coverage improves, but the device complexity increases and bridge concerns arise

Engineering Contradiction:
Improvesidewall uniformityVSAvoidstructure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The complex metal ring structures are removed from the process. Instead of using metal rings to block etching and improve sidewall uniformity, the patent extracts this function and achieves sidewall uniformity through alternative means, thereby reducing device complexity and eliminating bridge concerns

Inventive Principle:
Principle #2Taking out (Extraction)

3Productivity

If the copper seed layer is formed without a glue layer, then the process is faster, but self-agglomeration occurs and voids are formed reducing reliability

Engineering Contradiction:
Improveformation speedVSAvoidadhesion quality
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The glue layer is formed in advance before the copper seed layer deposition. This preliminary action prepares the surface with proper adhesion properties and prevents self-agglomeration, ensuring reliable copper layer formation without compromising productivity

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution ensures improved step coverage and uniformity of the copper seed layer, leading to enhanced electrical performance by eliminating voids and ensuring consistent resistivity distribution in the semiconductor device.

Implementation Method 1

A glue layer is introduced between the formation of a barrier layer and a copper seed layer, enhancing adhesion and preventing self-agglomeration

Methodology Applied
Scientific EffectAdhesion: Adhesive

Data Source

PatentUS9991204B2Through via structure for step coverage improvement
Publication Date: 2018.06.05 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US9991204B2 patent drawing
  • US9991204B2 patent drawing
  • US9991204B2 patent drawing

AI summary

A semiconductor device includes a substrate, a dielectric structure, a barrier layer, a glue layer, a copper seed layer and a copper layer. The dielectric structure is disposed over the substrate. The dielectric structure has a through via hole passing through the dielectric structure, and a sidewall of the through via hole includes at least one indentation. The barrier layer conformally covers the sidewall and a bottom of the through via hole. The glue layer conformally covers the barrier layer. The copper seed layer conformally covers the glue layer. The copper layer covers the copper seed layer and fills the through via hole.