GOA Circuit Leakage Prevention via Blocking Unit
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Solution Overview
Problem
Current GOA circuits face issues with current leakage at node Q, especially at high temperatures, affecting voltage potential maintenance and overall performance.
Innovation Solution
The GOA circuit design incorporates a blocking unit with twelfth and thirteenth TFTs, which are configured to turn off when the node is at high voltage potential, preventing current leakage by maintaining large gate-source voltage differences, and includes a bootstrap module to raise and hold voltage potentials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the GOA circuit operates at high temperature, then the current leakage of TFTs increases, but the voltage potential at node Q cannot be maintained effectively
Solution Approach 1:
The blocking unit proactively blocks current leakage paths before they can affect node Q voltage potential. By positioning the blocking unit to intercept leakage current from adjacent nodes, the circuit maintains voltage potential stability even at high temperatures where TFT current leakage naturally increases.
Solution Approach 2:
The blocking unit acts as an intermediary element between adjacent nodes and node Q. It introduces additional current blocking paths that mediate the interaction between leakage current and node Q, preventing direct leakage from affecting the voltage potential while allowing normal circuit operation.
2Reliability
If the blocking unit is added to prevent current leakage, then the temperature tolerance and reliability are improved, but the device complexity increases
Solution Approach 1:
The blocking unit is merged with the existing GOA circuit structure rather than being implemented as a completely separate system. The blocking unit shares common elements such as control signals and node connections with the main circuit, integrating the leakage protection function into the existing architecture to minimize additional complexity.
Solution Approach 2:
The blocking unit is designed to serve multiple functions: it blocks current leakage from adjacent nodes, maintains voltage potential at node Q, and operates seamlessly with the existing GOA circuit control mechanisms. This multi-functionality reduces the need for separate dedicated components, thereby limiting the increase in device complexity.
Data Source
AI summary
The present disclosure provides a gate driver on array (GOA) circuit and a liquid crystal display panel. A blocking unit is disposed in each stages of GOA units. When a first node is at a high voltage potential and a stage signal is also at a high voltage potential, a first control signal and a second control signal are at a low voltage potential and both gates of a twelfth thin-film transistor (TFT) and a thirteenth TFT are at the low voltage potential so that gate-source voltage differences between the twelfth TFT and the thirteenth TFT are large enough to properly turn off the twelfth TFT and the thirteenth TFT. Thus, current leakage of the first node is prevented.