GOA Circuit High-Temperature Durability via Leakage Suppression
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Solution Overview
Problem
Existing gate-on-array (GOA) circuits suffer from severe electric leakage and insufficient high-temperature durability during product reliability tests, which is a critical issue in display technologies.
Innovation Solution
The proposed GOA circuit incorporates a cascaded structure with node control, stage transmission, pull-up, pull-down, and pull-down remaining modules, along with a bootstrap capacitor, to control node potentials and suppress electric leakage by strategically connecting transistors to manage voltage differences and reference signals, enhancing high-temperature performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional GOA circuit structures are used, then device complexity is reduced and manufacturing cost is lowered, but electric leakage increases and high-temperature durability deteriorates
Solution Approach 1:
The GOA circuit is divided into multiple functional modules: node control module, stage transmission module, pull-up module, pull-down module, and pull-down remaining module. Each module performs a specific function to control node potential and suppress electric leakage, thereby improving high-temperature durability while maintaining manageable complexity through functional decomposition
Solution Approach 2:
A bootstrap capacitor is introduced as an intermediary element to maintain node potential during high-temperature operation. The capacitor stores charge and provides a stable reference potential, acting as a mediator that prevents electric leakage without requiring complex active control circuits
2Reliability
If node potential is maintained at high levels during operation, then signal transmission capability is improved, but electric leakage increases
Solution Approach 1:
The pull-down remaining module is designed to preemptively counteract electric leakage by continuously maintaining node potential at appropriate levels. This module activates before significant leakage can occur, applying a counteracting force to keep the node potential stable even during high-temperature operation
Solution Approach 2:
The circuit maintains equipotential conditions through the bootstrap capacitor and pull-down modules, ensuring that node potentials remain stable and controlled. By keeping nodes at appropriate potential levels relative to reference signals, the circuit prevents voltage differences that would drive electric leakage while maintaining signal transmission capability
Data Source
AI summary
The present application discloses a GOA circuit and a display panel. High-temperature durability of a first node is improved not only by adding a thirteenth transistor to a pull-down remaining module to lower a voltage difference between a source and a drain of the an eleventh transistor to suppress electric leakage of the first node, but also by adding a twentieth transistor to the pull-down remaining module to lower a voltage difference between a gate and a source of a nineteenth transistor to suppress electric leakage of the first node.