GOA Driver Circuit Repair Using Backup Transistors
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Solution Overview
Problem
Gate driver on array (GOA) structures in display panels are prone to deterioration due to low process stability, leading to inactive transistors and reduced cost and yield, as they easily get polluted by process particles, affecting the display effect and visual quality.
Innovation Solution
A repair method is introduced where inactive transistors are electrically isolated, and backup transistors are connected to maintain the same number of functional transistors, ensuring the display panel's yield and visual quality by isolating and replacing the connections between polluted transistors and electrode lines using laser ablation and welding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If gate driver on array (GOA) structures are used in display panels, then integration and compactness are improved, but process stability deteriorates leading to inactive transistors
Solution Approach 1:
The patent applies preliminary action by pre-establishing backup transistor circuits and repair pathways during the manufacturing process. Before defects occur, the system is designed with redundant transistors and pre-configured electrical connection paths that can be activated through laser repair techniques, allowing inactive transistors to be replaced without requiring complete circuit redesign or panel replacement.
Solution Approach 2:
The patent implements beforehand cushioning by incorporating backup transistor circuits that serve as protective reserves against process defects. These redundant transistors are prepared in advance and can be electrically connected to replace inactive ones, cushioning the system against the harmful effects of particle contamination and process instability that inherently occur during manufacturing.
2Reliability
If repair methods using laser ablation and welding are applied, then yield and reliability are improved, but process complexity increases
Solution Approach 1:
The patent applies mechanics substitution by replacing traditional mechanical repair methods with laser-based ablation and welding techniques. Instead of physically manipulating or reconnecting transistor terminals through mechanical means, the invention uses laser energy to precisely ablate defective connections and weld new electrical pathways, thereby improving repair precision and reducing the complexity of manual intervention while enhancing overall yield.
3Reliability
If backup transistors are integrated into the GOA structure, then fault tolerance is improved, but manufacturing cost increases
Solution Approach 1:
The patent applies parameter changes by modifying the electrical connection states of transistor circuits through laser-induced changes. By controlling the laser parameters (energy, duration, focal point), the system can selectively activate backup transistors and establish new electrical pathways without requiring physical component changes or complex assembly modifications, thereby managing manufacturing costs while improving fault tolerance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the yield and visual quality of display panels by maintaining the number of functional transistors, thereby improving the response rate and resolution of the display panel, even when transistors are polluted, and ensures the display panel's reliability.
Implementation Method 1
isolating and replacing the connections between polluted transistors and electrode lines using laser ablation and welding
Implementation Method 2
isolating and replacing the connections between polluted transistors and electrode lines using laser ablation and welding
Data Source
AI summary
Disclosed is a driver circuit structure integrated in a display panel. The driver circuit structure includes a plurality of transistors and a backup transistor. After completing the driver circuit structure, the disclosure inspects it to find an inactive transistor. The inspection process first, isolates the electrical connection between the inactive transistor and the first electrode line and/or the electrical connection between the inactive transistor and the second electrode line. Next, the source electrode of the backup transistor and the first electrode line and/or electrically connecting the drain electrode of the backup transistor and the second electrode line are electrical connected.


