GOA Driving Circuit With Floating Transistor for Stable High Output
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Solution Overview
Problem
High-mobility Gate On Array (GOA) circuits face issues of insufficient output high voltage and multiple outputs due to low-voltage floating, particularly in high-mobility GOA circuits with output curve issues.
Innovation Solution
Incorporation of a driving circuit with pull-up node, input, first output, and pull-down node noise reduction circuits, utilizing floating processing transistors with a floating electrode between the first and second electrodes, and performing source-drain floating processing to increase threshold voltage and maintain a good off state, thereby preventing voltage pull-down.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If high-mobility transistors are used in GOA circuits, then switching speed and drive capability are improved, but output high voltage becomes insufficient and low-voltage floating occurs
Solution Approach 1:
The transistor is segmented into multiple electrodes: gate electrode, floating electrode, first electrode, and second electrode. The floating electrode is positioned between the first and second electrodes to create distinct functional regions that address both high-speed switching and voltage stability requirements
Solution Approach 2:
The distance between the first electrode and second electrode is increased beyond the initial distance, and the floating electrode is introduced to modify the electric field distribution. This parameter change increases the threshold voltage to prevent low-voltage floating while preserving the high-mobility transistor's switching speed
2Reliability
If transistor threshold voltage is increased to prevent low-voltage floating, then output voltage stability is improved, but leakage current control becomes more difficult
Solution Approach 1:
The floating electrode acts as an intermediary element between the first electrode and second electrode. It modifies the electric field distribution and potential profile in the channel region, enabling better control of both threshold voltage and leakage current through its position and potential
3Reliability
If multiple electrodes are added to the transistor structure, then voltage control is improved, but device complexity increases
Solution Approach 1:
The floating electrode is positioned in the spatial dimension between the first and second electrodes, creating a multi-dimensional electrode arrangement. This dimensional approach enables improved voltage control without requiring complex three-dimensional structures or additional layers beyond the planar configuration
Data Source
AI summary
A driving circuit and a display device are provided. The driving circuit includes a pull-up node noise reduction circuit, an input circuit, a first output noise reduction circuit and a pull-down node noise reduction circuit; at least one transistor included in the driving circuit is a floating processing transistor including a floating electrode, a gate electrode, a first electrode and a second electrode; the floating electrode is arranged on the same layer with at least one of the first electrodes and the second electrode of the floating processing transistor; the floating electrode is arranged between the first electrode and the second electrode of the floating processing transistor, and the floating electrode has no electric signal input; a shortest distance between the first electrode of the floating processing transistor and the second electrode of the floating processing transistor is greater than an initial distance.