GOA Circuit with Shared Node for Leakage Reduction

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Solution Overview

Problem

The current array substrate fails to maintain a high level for an extended period due to large leakage currents in thin film transistors, preventing the gate driver on array (GOA) circuit from outputting ultra-wide pulses, which is essential for large-size AMOLED panels.

Innovation Solution

The integration of a GOA circuit with multiple cascaded units connected to logic OR gate units, allowing at least three cascaded GOA units to be raised to a high level, reducing leakage current and enabling stable output signals by extending the pulse width of the GOA circuit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Duration of action of moving object

If the GOA circuit uses conventional cascaded units with large leakage current TFTs, then the circuit structure is simple, but the node Q cannot maintain high level for long time and the GOA circuit cannot output ultra-wide pulse

Engineering Contradiction:
Improvepulse widthVSAvoidnode Q high level maintenance
Core Design Contradiction:
Duration of action of moving objectVSReliability

Solution Approach 1:

The patent combines multiple GOA units (at least three) to share a common node Q, allowing them to collectively maintain high level through combined charging capability. This merging approach enables ultra-wide pulse output (3ms+) by distributing the charging burden across multiple units while sharing the storage node, solving the contradiction between pulse width and reliability.

Inventive Principle:
Principle #5Merging (Combining)

2Productivity

If the GOA circuit outputs ultra-wide pulse (>3ms), then the display device can achieve large-size high-definition display, but the TFT leakage current causes node Q voltage to drop and cascaded transmission fails

Engineering Contradiction:
Improvedisplay performanceVSAvoidleakage current
Core Design Contradiction:
ProductivityVSLoss of energy

Solution Approach 1:

The patent segments the GOA circuit into multiple independent units that share a common node Q. Each unit has its own charging path through dedicated TFTs, allowing them to collectively charge the shared node Q. This segmentation enables the system to overcome individual TFT leakage limitations by combining multiple charging sources, achieving ultra-wide pulse output required for large-size high-definition displays.

Inventive Principle:
Principle #1Segmentation

3Duration of action of moving object

If at least three cascaded GOA units share a common node Q, then the GOA circuit can output ultra-wide pulse, but the circuit complexity increases

Engineering Contradiction:
Improvepulse widthVSAvoidcircuit structure
Core Design Contradiction:
Duration of action of moving objectVSDevice complexity

Solution Approach 1:

The patent merges multiple GOA units by making them share a common node Q, which reduces overall circuit complexity compared to having completely independent units for each pulse output. The shared node Q acts as a common storage element that all units can charge, eliminating the need for separate storage nodes and reducing redundant circuitry while still enabling ultra-wide pulse output.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS11355067B2Array substrate
Publication Date: 2022.06.07 SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
  • US11355067B2 patent drawing
  • US11355067B2 patent drawing
  • US11355067B2 patent drawing

AI summary

An array substrate is provided, which includes a gate driver on array (GOA) circuit and a plurality of logic OR gate units integrated in a rear end of the GOA circuit. The GOA circuit includes a plurality of cascaded GOA units, each of the GOA units includes a scan terminal, and at least three continuously-cascaded GOA units are connected to one of the logic OR gate units through the scan terminals.