GOA Unit Second Electrode Grooves for TFT Channel Width Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In the production of GOA units for liquid crystal panels, the TFT channel becomes excessively wide due to excessive developer liquid accumulation during the development process, caused by the presence of a capacitor structure, leading to narrowed source and drain electrodes and widened channels.
Innovation Solution
Incorporating a second electrode with grooves in the GOA unit, where the distribution density of the grooves matches that of the TFT channels, to redirect developer liquid flow away from the channel regions, preventing excessive development and maintaining the integrity of the TFT channel dimensions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a capacitor structure with an integral second electrode is used in the GOA unit, then the capacitor can be formed to maintain the TFT module function, but excessive developer liquid accumulates at the channel region during development, causing the TFT channel to become excessively wide and the source/drain electrodes to narrow
Solution Approach 1:
The second electrode of the capacitor structure is divided into multiple isolated electrode portions instead of being an integral structure. These electrode portions are distributed in the insulating layer at different positions, which prevents excessive developer liquid accumulation at the channel region during the development process, thereby maintaining precise control over TFT channel width while still forming a functional capacitor structure.
2Manufacturing precision
If the photo resist at the channel region is half reserved during development, then the channel pattern can be defined, but excessive developer liquid flows toward the channel region from the capacitor area, causing over-development and channel widening
Solution Approach 1:
The second electrode is segmented into multiple isolated portions distributed in the insulating layer. This segmentation prevents the formation of a large continuous photo resist area above the capacitor, thereby reducing the volume of developer liquid that can flow toward the channel region during development, and preventing over-development of the channel pattern.
Solution Approach 2:
The insulating layer serves as an intermediary medium that isolates the electrode portions from each other and from the channel region. By placing isolated electrode portions in the insulating layer, the structure acts as a barrier to developer liquid flow, preventing excessive accumulation at the channel region while still allowing the capacitor function to be maintained.
Data Source
AI summary
Embodiments of the present disclosure provide a GOA unit and a method for producing the same and a gate driver circuit, which are directed to a field of display technique. The GOA unit includes: a TFT module and a capacitor structure formed on a substrate. The TFT module includes a gate electrode, a source electrode and a drain electrode, and the capacitor structure includes a first electrode and a second electrode configured to form a first capacitor. The gate of the TFT module is located in a same layer as the first electrode of the capacitor structure, the source electrode and the drain electrode of the TFT module are located in a same layer as the second electrode of the capacitor structure, and the second electrode has a groove. Embodiments of the present application are used for a display apparatus.