Graded N-Type Diode Structure for SOS Pre-Pulse Suppression
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Solution Overview
Problem
Existing semiconductor opening switches (SOS) suffer from pre-pulses that extend pulse rise times and durations, degrading performance in high-power applications.
Innovation Solution
Implementing a semiconductor diode structure with a gradually doped n-type region between a base n-type region and a highly doped n-type region, utilizing semiconductor crystal growth techniques to achieve specific donor and acceptor concentration profiles that mitigate pre-pulses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional uniform doping is used in semiconductor diode structures, then manufacturing is simpler, but pre-pulses are generated that extend pulse rise times and durations
Solution Approach 1:
The patent applies local quality by implementing non-uniform doping profiles where different regions of the semiconductor diode structure have different doping concentrations. Specifically, the guard ring region has a different doping concentration than the active region, and the drift region has a graded doping profile. This localized variation in doping quality suppresses pre-pulses and optimizes pulse rise time without compromising overall device performance.
Solution Approach 2:
The patent changes the doping concentration parameter across different regions and depths of the semiconductor diode structure. By implementing graded doping profiles where the doping concentration varies continuously or in steps, the patent optimizes the electric field distribution to eliminate pre-pulses while maintaining manufacturing feasibility through controlled parameter transitions.
2Productivity
If doping profiles are optimized to suppress pre-pulses, then pulse performance improves, but device complexity increases
Solution Approach 1:
The patent segments the semiconductor diode structure into distinct regions with different doping characteristics - guard ring region, active region, and drift region - each optimized for specific functions. This segmentation allows pre-pulse suppression through localized doping optimization without requiring complex doping throughout the entire device, thereby improving pulse generation efficiency while managing device complexity.
3Power
If deeper n-type regions are implemented, then peak voltage is maintained or enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The patent implements dynamic doping profiles where the doping concentration varies with depth in a controlled manner. The graded doping in the drift region and the specific depth profiling in n-type regions create optimal electric field distributions that maintain high peak voltage while using manufacturable doping transitions. This dynamic approach to doping distribution achieves high power output without requiring excessively precise manufacturing tolerances.
Data Source
AI summary
Design and optimization of donor and accepter concentration profiles in a diode structure can be effective at suppressing pre-pulses appearing in high power pulses output by semiconductor opening switches that integrate the diode structure. An example diode structure includes an additional n-type region or layer that is gradually doped. For example, a diode structure includes at least three n-type regions, with the additional n-type region being sandwiched between a n-type region with relatively lower doping and a n-type region with relatively higher doping. The n-type region with relatively higher doping may also feature a doping gradient, and thus, the diode structure can include two n-type regions each having a respective doping gradient. Formation of the additional n-type region with its doping gradient at depth within the diode structure is achievable by gradual introduction of the n-type dopant during crystal growth of the diode structure.