Graded Composition Source/Drain Alloys for FinFET Resistance
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Solution Overview
Problem
The parasitic series resistance in finFET devices, particularly when channel length is reduced, is a challenge due to contact resistance and spreading resistance components, which are influenced by the metal/semiconductor interface barrier height.
Innovation Solution
The implementation of finFET devices with high mobility semiconductor materials in recessed source/drain regions, using graded composition epi-grown semiconductor alloy materials that transition from a rich to a lean composition of the high mobility semiconductor material, optimizing the channel interface and contact regions to minimize resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the channel length is reduced to improve device scaling, then the device size and power consumption are improved, but the parasitic series resistance increases
Solution Approach 1:
The patent applies local quality by creating a composition gradient in the semiconductor alloy material within the source/drain recess regions. The high mobility semiconductor material composition varies spatially, being richer near the channel interface and leaner toward the contact region, optimizing both carrier mobility and electrical contact properties in different locations
Solution Approach 2:
The patent changes the compositional parameter of the semiconductor alloy material to reduce parasitic resistance. By adjusting the high mobility semiconductor material content in the graded composition, the patent optimizes the balance between carrier mobility in the channel region and electrical contact properties in the source/drain regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces parasitic resistance by optimizing the composition gradient of the semiconductor alloy material, enhancing the effective drive current and interface resistivity, thereby improving the overall performance of finFET devices.
Implementation Method 1
a graded composition epi-grown semiconductor alloy material that includes a high mobility semiconductor material
Data Source
AI summary
A finFET device can include a high mobility semiconductor material in a fin structure that can provide a channel region for the finFET device. A source/drain recess can be adjacent to the fin structure and a graded composition epi-grown semiconductor alloy material, that includes a component of the high mobility semiconductor material, can be located in the source/drain recess.