Graded Transition Layer for Porous SiCOH Adhesion

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

The challenge in semiconductor devices is the low interfacial strength between porous SiCOH layers and other dielectric or conductive layers, leading to delamination and reduced reliability due to rapid precursor reactions causing gas phase nucleation and particulate formation, which affects the adhesion and cohesive strength near the interface.

Innovation Solution

A method involving the formation of a graded transition layer with increasing carbon and porosity, starting with a carbon-free oxide layer, followed by a porous SiCOH layer, where the precursor flows are carefully controlled to prevent carbon peaks and oxygen dips, ensuring a homogeneous composition and improved adhesion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If precursor flows are increased to improve deposition rate, then productivity is improved, but gas phase nucleation occurs causing particulate formation

Engineering Contradiction:

Improvedeposition rateVSAvoidparticulate formation

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The deposition process uses periodic action by first establishing a surface preparation plasma, then introducing precursors in a controlled sequence. The surface preparation plasma is maintained active during the initial stage of deposition, creating periodic surface activation that prevents gas phase nucleation even at higher deposition rates, thereby eliminating particulate formation while maintaining productivity

Inventive Principle:

Principle #19Periodic action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances interfacial strength, preventing delamination and cohesive failure, and results in a robust interconnect structure with improved mechanical reliability and reduced signal delays in ULSI circuits.

Implementation Method 1

starting the deposition of a specific layer, while a surface preparation plasma is still present and active in the reactor

Methodology Applied

Scientific EffectPlasma: Plasma

Implementation Method 2

deposited by plasma enhanced chemical vapor deposition (PECVD) techniques

Methodology Applied

Scientific EffectPlasma enhanced chemical vapor deposition: Plasma Enhanced Chemical Vapour Deposition

Data Source

PatentUS7615482B2Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength

Publication Date: 2009.11.10 APPLIED MATERIALS INC

AI summary

Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.