Room-Temperature Grafting Spacer Layer Formation

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Traditional lithography technologies face resolution issues when forming spacer layers for semiconductor devices below 20 nanometer nodes, leading to inadequate performance and potential damage from high-temperature baking and etching steps.

Innovation Solution

A method using a fluid-based grafting solution with a grafting agent and surfactant to form a spacer layer at room temperature without the need for high-temperature baking or etching, employing EUV and e-beam lithography to improve pattern dimension accuracy and avoid damage to the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If traditional lithography technologies are used to form spacer layers, then the process is simpler, but resolution issues occur for devices below 20 nanometer nodes

Engineering Contradiction:

Improvepattern accuracyVSAvoidprocess complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent changes the physical and chemical parameters of the spacer layer formation process by using a fluid-based grafting solution with controlled composition (surfactant, initiator, monomer) that enables precise pattern formation at nanometer scales without requiring complex lithography equipment. The room temperature processing and controlled polymerization parameters achieve high resolution while simplifying the overall process.

Inventive Principle:

Principle #35Parameter changes

2Manufacturing precision

If high-temperature baking and etching steps are used to form spacer layers, then the spacer layer can be formed, but damage occurs to the substrate

Engineering Contradiction:

Improvespacer layer formationVSAvoidsubstrate damage

Core Design Contradiction:

Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent replaces the mechanical and thermal processes (high-temperature baking and etching) with a chemical grafting process. The fluid-based solution forms the spacer layer through polymerization at room temperature, eliminating the need for high-temperature thermal processing and harsh etching steps that cause substrate damage.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent introduces a fluid-based grafting solution as an intermediary medium that enables spacer layer formation without direct thermal or mechanical contact with the substrate. The solution contains surfactants and initiators that mediate the polymerization process, allowing controlled spacer formation at room temperature and preventing substrate damage.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Object-affected harmful factors

If room temperature grafting process is used, then substrate damage is avoided, but the spacer layer formation precision may be insufficient

Engineering Contradiction:

Improvesubstrate damageVSAvoidspacer layer precision

Core Design Contradiction:

Object-affected harmful factorsVSManufacturing precision

Solution Approach 1:

The patent uses a composite fluid-based grafting solution containing multiple components (surfactant, initiator, monomer) that work synergistically. The surfactant controls surface properties and polymerization uniformity, the initiator enables controlled polymerization at room temperature, and the monomer forms the spacer layer structure. This composite approach achieves both room temperature processing and high precision spacer formation.

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method enables the formation of precise spacer layers without the risks associated with high-temperature processing, enhancing the fabrication of smaller semiconductor devices and improving pattern accuracy.

Implementation Method 1

forming a conformal layer only over the patterned photoresist layer by applying a grafting solution over the patterned photoresist layer

Methodology Applied

Scientific EffectPolymerization: Photopolymerisation

Implementation Method 2

A method using a fluid-based grafting solution with a grafting agent and surfactant to form a spacer layer at room temperature

Methodology Applied

Scientific EffectSurfactant action: Surfactant

Data Source

PatentUS10114291B2Grafting agent for forming spacer layer

Publication Date: 2018.10.30 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A method includes forming a first layer over a substrate; forming a patterned photoresist layer over the first layer; applying a solution over the patterned photoresist layer to form a conformal layer over the pattern photoresist layer, wherein the conformal layer further includes a first portion over a top surface of the patterned photoresist layer and second portion extending along sidewalls of the patterned photoresist layer; selectively removing the first portion of the conformal layer formed over the top surface of the patterned photoresist layer; and selectively removing the patterned photoresist layer thereby leaving the second portion of the conformal layer.