Selective Graphene Growth on Patterned Buffer Layer
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Solution Overview
Problem
Current methods for patterning graphene in semiconductor devices, such as photolithography and direct laser raster writing, face challenges in achieving high resolution and efficiency, with photolithography introducing chemical reagents that increase sheet resistance and direct laser raster writing having long production cycles and insufficient resolution.
Innovation Solution
A method involving the formation of a growth substrate with a sacrificial substrate, dielectric layers, and a selectively grown graphene layer, where the graphene is grown on a patterned buffer layer, allowing for the avoidance of adverse patterning effects by using epitaxial growth and subsequent removal of sacrificial layers to expose the graphene layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography is used for patterning graphene, then the graphene can be patterned, but the sheet resistance increases due to chemical reagents
Solution Approach 1:
A buffer layer is introduced as an intermediary between the sacrificial substrate and the graphene layer. The buffer layer enables selective graphene growth on patterned regions while protecting the graphene from direct contact with chemical reagents during etching, thus preventing sheet resistance increase while maintaining patterning capability
Solution Approach 2:
The substrate is divided into a sacrificial substrate and a buffer layer, with the buffer layer forming a patterned structure that selectively supports graphene growth. This segmentation allows the graphene to be grown only in desired patterned regions without exposure to harmful chemicals
2Object-generated harmful factors
If direct laser raster writing is used for patterning graphene, then no chemical reagents are introduced, but the production cycle is long and resolution is insufficient
Solution Approach 1:
The mechanical laser writing process is replaced with a chemical vapor deposition process where graphene is selectively grown on patterned buffer layer regions. This substitution enables parallel growth across multiple patterned regions simultaneously, dramatically reducing production cycle time while maintaining chemical-free patterning benefits
Solution Approach 2:
The buffer layer is pre-patterned into desired structures before graphene growth. This preliminary action defines the exact regions where graphene will grow, enabling high-resolution patterning without the need for slow laser writing during the actual graphene formation process
3Manufacturing precision
If photolithography is used for patterning graphene, then the graphene can be patterned, but the production complexity increases due to multiple chemical solutions
Solution Approach 1:
The complex photolithography process with multiple chemical solutions (etching solution, developing solution, stripping solution) is extracted and replaced with a single selective growth process using patterned buffer layer, significantly reducing process complexity while maintaining patterning precision
Solution Approach 2:
The buffer layer serves as an intermediary that eliminates the need for multiple chemical processing steps. By pre-patterning the buffer layer, the graphene growth becomes self-aligned and selective, removing the complexity of sequential chemical treatments
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the manufacturing of high-quality semiconductor devices with improved graphene patterning resolution and reduced production complexity, avoiding the limitations of existing methods by selectively growing graphene on a patterned buffer layer and using specific etching and deposition processes.
Implementation Method 1
forming, by using an epitaxial growth process, the buffer layer covering the exposed surfaces of the plurality of recesses
Implementation Method 2
selectively growing a graphene layer on the buffer layer
Implementation Method 3
removing the sacrificial substrate
Data Source
AI summary
The present disclosure relates to the technical field of semiconductor technologies and discloses a semiconductor device and a manufacturing method therefor. The method includes forming a growth substrate by providing a substrate structure containing a sacrificial substrate, a first dielectric layer on the sacrificial substrate, and a plurality of recesses formed through the first dielectric layer and into the sacrificial substrate, by forming a buffer layer covering exposes surfaces of the plurality of recesses, by selectively growing a graphene layer on the buffer layer, and by filling the plurality of recesses with a second dielectric layer. The method further includes attaching the growth substrate to a bonding substrate such that the second dielectric layer attaches to the bonding substrate; removing the sacrificial substrate; and removing the buffer layer so as to expose the graphene layer. The method of present disclosure avoids adverse effects from patterning graphene by using selective growth of graphene on a patterned buffer layer.